參數(shù)資料
型號(hào)： ISPLSI2128-100LTI
廠商： Lattice Semiconductor Corporation
英文描述： In-System Programable High Density PLD
中文描述： 在系統(tǒng)可編程高密度可編程邏輯器件
文件頁(yè)數(shù)： 4/19頁(yè)
文件大小： 234K
代理商： ISPLSI2128-100LTI
Specifications
ispLSI 2128VE
4
Switching Test Conditions
Figure 2. Test Load
Input Pulse Levels
Input Rise and Fall Time
Table 2 - 0003/2128VE
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
3-state levels are measured 0.5V from steady-state active level.
GND to 3.0V
≤
1.5ns 10% to 90%
1.5V
1.5V
See Figure 2
DC Electrical Characteristics
Over Recommended Operating Conditions
Output Load Conditions (see Figure 2)
TEST CONDITION
R1
316
∞
316
R2
348
348
348
CL
35pF
35pF
35pF
A
B
Active High
Active Low
Active High to Z
at
V
OH
C
316
348
5pF
∞
348
5pF
Active Low to Z
at
V
+0.5V
OL
Table 2-0004/2128VE
V
OL
V
OH
I
IL
SYMBOL
1. One output at a time for a maximum duration of one second. V = 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
2. Measured using eight 16-bit counters.
3. Typical values are at V = 3.3V and T = 25
°
C.
4. Maximum I varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum I .
Table 2-0007/2128VE
1
I
IH
I
IL-isp
I
IL-PU
I
OS
PARAMETER
2, 4
I
CC
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
BSCAN
Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I = -4 mA
0V
≤
V
≤
V (Max.)
IN
(V - 0.2)V
≤
V
≤
V
V
≤
V
≤
5.25V
0V
≤
V
≤
V
0V
≤
V
≤
V
V = 3.3V, V = 0.5V
V = 0.0V, V = 3.0V
f = 1 MHz
IN
IL
IN
IL
CONDITION
MIN.
–
2.4
–
TYP.
–
–
–
MAX.
0.4
–
-10
UNITS
V
V
μ
A
3
–
–
–
–
–
–
–
–
–
–
–
195
10
10
-150
-150
-100
–
μ
A
μ
A
μ
A
μ
A
mA
mA
CC
+ 3.3V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213A/2128VE
相關(guān)PDF資料
PDF描述
ISPLSI2128-80LM In-System Programable High Density PLD
ISPLSI2128-80LMI In-System Programable High Density PLD
ISPLSI2128-80LQ In-System Programable High Density PLD
ISPLSI2128-80LT 60V N-Channel QFET
ISPLSI2128-80LTI In-System Programable High Density PLD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISPLSI2128-80LM 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programable High Density PLD
ISPLSI2128-80LMI 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programable High Density PLD
ispLSI2128-80LQ 功能描述:CPLD - 復(fù)雜可編程邏輯器件 USE ispMACH 4000V RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
ISPLSI2128-80LQI 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programable High Density PLD
ispLSI2128-80LT 功能描述:CPLD - 復(fù)雜可編程邏輯器件 USE ispMACH 4000V RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*