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參數(shù)資料
| 型號： | ISPLSI2128VE-180LB208 |
| 廠商： | LATTICE SEMICONDUCTOR CORP |
| 元件分類： | PLD |
| 英文描述： | 3.3V In-System Programmable SuperFAST⑩ High Density PLD |
| 中文描述： | EE PLD, 7.5 ns, PBGA208 |
| 封裝： | FBGA-208 |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 234K |
| 代理商： | ISPLSI2128VE-180LB208 |
Specifications
ispLSI 2128VE
3
Absolute Maximum Ratings
1
Supply Voltage V
cc
.................................. -0.5 to +5.4V
Input Voltage Applied............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature................................ -65 to 150
°
C
Case Temp. with Power Applied .............. -55 to 125
°
C
Max. Junction Temp. (T
J
) with Power Applied ... 150
°
C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Condition
Erase Reprogram Specifications
Capacitance (T
A
=25
°
C, f=1.0 MHz)
C
C
C
SYMBOL
Table 2-0006/2128VE
PARAMETER
I/O Capacitance
Clock and Global Output Enable Capacitance
6
UNITS
pf
TYPICAL
8
TEST CONDITIONS
V = 3.3V, V = 0.0V
1
2
Dedicated Input Capacitance
pf
pf
V = 3.3V, V = 0.0V
V = 3.3V, V = 0.0V
10
3
Table 2-0008/2128VE
PARAMETER
MINIMUM
10,000
MAXIMUM
–
UNITS
Cycles
Erase/Reprogram Cycles
T
A
= 0
°
C to + 70
°
C
T
A
= -40
°
C to + 85
°
C
SYMBOL
Table 2-0005/2128VE
V
CC
V
IH
V
IL
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
MIN.
MAX.
UNITS
3.0
3.0
2.0
V
–
0.5
3.6
3.6
5.25
0.8
V
V
V
V
Commercial
Industrial
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISPLSI2128VE-180LT100 | 3.3V In-System Programmable SuperFAST⑩ High Density PLD |
| ISPLSI2128VE-180LT176 | 3.3V In-System Programmable SuperFAST⑩ High Density PLD |
| ISPLSI2128VE-250LB208 | 3.3V In-System Programmable SuperFAST⑩ High Density PLD |
| ISPLSI2128VE-250LT176 | 3.3V In-System Programmable SuperFAST⑩ High Density PLD |
| ISPLSI2128VL-135LB100 | 2.5V In-System Programmable SuperFAST⑩ High Density PLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISPLSI2128VE180LB208I | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable SuperFAST⑩ High Density PLD |
| ISPLSI2128VE180LBN208 | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable SuperFAST⑩ High Density PLD |
| ISPLSI2128VE180LBN208I | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable SuperFAST⑩ High Density PLD |
| ISPLSI2128VE180LQ160 | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable SuperFAST⑩ High Density PLD |
| ISPLSI2128VE-180LQ160 | 功能描述:CPLD - 復(fù)雜可編程邏輯器件 RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100 |
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