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參數(shù)資料
| 型號： | ITF86110DK8T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET |
| 中文描述： | 30 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 200K |
| 代理商： | ITF86110DK8T |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
2
4
6
8
25
50
75
100
125
150
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= 4.0V, R
θ
JA
= 228
o
C/W
V
GS
= 10V, R
θ
JA
= 50
o
C/W
0.01
0.1
1
10
-4
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
10
2
10
3
0.001
10
-5
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
R
θ
JA
= 228
o
C/W
2
1
10
100
1000
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
,
t, PULSE WIDTH (s)
V
GS
= 4.5V
T
A
= 25
o
C
I = I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
R
θ
JA
= 228
o
C/W
10
1
10
0
10
2
10
3
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
ITF86110DK8T
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