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參數(shù)資料
| 型號： | ITF86116SQT |
| 廠商： | Intersil Corporation |
| 英文描述： | 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET |
| 中文描述： | 10A條，30V的，0.012 Ohm的N通道，邏輯層次，功率MOSFET |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 199K |
| 代理商： | ITF86116SQT |
5
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.90
0.95
1.00
1.10
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
1.05
100
1000
3000
0.1
1.0
10
30
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
20
30
40
V
G
,
V
DD
= 15V
Q
g
, GATE CHARGE (nC)
I
D
= 9A
I
D
= 1A
WAVEFORMS IN
DESCENDING ORDER:
10
150
200
250
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 5.0A
t
r
t
f
t
d(ON)
100
50
t
d(OFF)
100
150
200
250
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 10A
t
d(OFF)
t
r
t
d(ON)
t
f
50
ITF86116SQT
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