參數(shù)資料
型號： ITF87008DQT
廠商： Intersil Corporation
英文描述： Dual N-Channel,Specified Power MOSFET(雙N溝道邏輯電平功率MOS場效應(yīng)管)
中文描述： 雙N溝道，指定功率MOSFET（雙?溝道邏輯電平功率馬鞍山場效應(yīng)管）
文件頁數(shù)： 1/12頁
文件大小： 201K
代理商： ITF87008DQT
1
TM
File Number
4814.3
ITF87008DQT
7.0A, 20V, 0.023 Ohm, Dual N-Channel,
2.5V Specified Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.023
,
V
GS
=
4.5V
- r
DS(ON)
= 0.024
,
V
GS
=
4.0V
- r
DS(ON)
= 0.029
,
V
GS
=
2.5V
2.5 Volt Gate Drive Capability
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curves
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
TSSOP-8
4
1
23
5
GATE1(4)
DRAIN1(1)
SOURCE1(3)
SOURCE1(2)
(8) DRAIN2
(7) SOURCE2
(6) SOURCE2
(5) GATE2
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF87008DQT
TSSOP-8
87008
NOTE: When ordering, use the entire part number. ITF87008DQT2
is available only in tape and reel.
ITF87008DQT
20
20
±
12
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 4.0V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.0V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 2.5V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB370. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 62.5
o
C/W measured using FR-4 board with 0.50 in
2
(322.6 mm
2
) copper pad at 1 second.
3. 230
o
C/W measured using FR-4 board with 0.0022 in
2
(1.44 mm
2
) copper pad at 1000 seconds.
7.0
7.0
2.0
2.0
Figure 4
2.0
16
-55 to 150
A
A
A
A
W
mW/
o
C
o
C
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
July 2000
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER is a trademark of Analogy Inc. PSPICE is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
Intersil Corporation 2000
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