參數(shù)資料
型號(hào)： ITF87008DQT
廠商： Intersil Corporation
英文描述： Dual N-Channel,Specified Power MOSFET(雙N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
中文描述： 雙N溝道，指定功率MOSFET（雙?溝道邏輯電平功率馬鞍山場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 201K
代理商： ITF87008DQT
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V Figure 11
20
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V
-
-
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
12V
-
-
±
10
μ
A
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A Figure 10
0.5
-
1.5
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 7.0A, V
GS
= 4.5V Figures 8,9
-
0.017
0.023
I
D
= 2.0A, V
GS
= 4.0V Figure 8
-
0.018
0.024
I
D
= 2.0A, V
GS
= 2.5V Figure 8
-
0.022
0.029
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
θ
JA
Pad Area = 0.50 in
2
(322.6 mm
2
) (Note 2)
-
-
62.5
o
C/W
Pad Area = 0.017 in
2
(11.2 mm
2
) Figure 20
-
-
199
o
C/W
Pad Area = 0.0022 in
2
(1.44 mm
2
) Figure 20
-
-
230
o
C/W
SWITCHING SPECIFICATIONS
V
GS
= 2.5V
Turn-On Delay Time
t
d(ON)
V
DD
= 10V, I
D
= 2.0A
V
GS
=
2.5V,
R
GS
= 12
Figures 14, 18, 19
-
110
-
ns
Rise Time
t
r
-
475
-
ns
Turn-Off Delay Time
t
d(OFF)
-
180
-
ns
Fall Time
t
f
-
265
-
ns
SWITCHING SPECIFICATIONS
V
GS
= 4.5V
Turn-On Delay Time
t
d(ON)
V
DD
= 10V, I
D
= 7.0A
V
GS
=
4.5V,
R
GS
= 13
Figures 15, 18, 19
-
60
-
ns
Rise Time
t
r
-
185
-
ns
Turn-Off Delay Time
t
d(OFF)
-
300
-
ns
Fall Time
t
f
-
280
-
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 4.5V
V
DD
= 10V,
I
D
= 7.0A,
I
g(REF)
= 1.0mA
Figures 13, 16, 17
-
9.7
-
nC
Gate Charge at 2V
Q
g(2)
V
GS
= 0V to 2.0V
-
5.7
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 0.5V
-
0.5
-
nC
Gate to Source Gate Charge
Q
gs
-
1.1
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
2.9
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
Figure 12
-
980
-
pF
Output Capacitance
C
OSS
-
300
-
pF
Reverse Transfer Capacitance
C
RSS
-
160
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 7.0A
-
0.83
-
V
Reverse Recovery Time
t
rr
I
SD
= 7.0A, dI
SD
/dt = 15A/
μ
s
-
44
-
ns
Reverse Recovered Charge
Q
RR
I
SD
= 7.0A, dI
SD
/dt = 15A/
μ
s
-
2.2
-
nC
ITF87008DQT
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