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參數(shù)資料
| 型號： | ITF87068SQT |
| 廠商： | Intersil Corporation |
| 英文描述： | 9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P溝道2.5V專用功率MOS場效應管) |
| 中文描述： | 第9A，20V的，0.015歐姆，P溝道，2.5V的指定功率MOSFET（第9A，20V的，0.015ΩP溝道2.5V的專用功率馬鞍山場效應管） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 197K |
| 代理商： | ITF87068SQT |
1
TM
File Number
4811.3
ITF87068SQT
9A, 20V, 0.015 Ohm, P-Channel,
2.5V Specified Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.015
,
V
GS
=
4.5V
- r
DS(ON)
= 0.016
,
V
GS
=
4.0V
- r
DS(ON)
= 0.023
,
V
GS
=
2.5V
2.5V Gate Drive Capability
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curves
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
TSSOP-8
4
1
23
5
SOURCE(2)
DRAIN(8)
DRAIN(1)
SOURCE(7)
SOURCE(6)
DRAIN(5)
SOURCE(3)
GATE(4)
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF87068SQT
TSSOP-8
87068
NOTE: When ordering, use the entire part number. ITF87068SQT2
is available only in tape and reel.
ITF87068SQT
-20
-20
±1
2
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= -4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= -4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= -4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= -2.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB370. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 62.5
o
C/W measured using FR-4 board with 1.0 in
2
(645.2 mm
2
) copper pad at 10s.
9.0
9.0
5.5
4.5
Figure 4
2.0
16
-55 to 150
A
A
A
A
W
mW/
o
C
o
C
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
July 2000
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER is a trademark of Analogy Inc. PSPICE is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
Intersil Corporation 2000
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