參數(shù)資料
型號： ITF87068SQT
廠商： Intersil Corporation
英文描述： 9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P溝道2.5V專用功率MOS場效應(yīng)管)
中文描述： 第9A，20V的，0.015歐姆，P溝道，2.5V的指定功率MOSFET（第9A，20V的，0.015ΩP溝道2.5V的專用功率馬鞍山場效應(yīng)管）
文件頁數(shù)： 5/12頁
文件大?。?/td> 197K
代理商： ITF87068SQT
5
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.95
1.0
1.05
1.1
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= -250
μ
A
100
1000
-0.1
-1
-10
5000
-20
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
-1
-2
-3
-4
-5
0
5
10
15
20
25
30
35
V
G
,
V
DD
= -10V
Q
g
, GATE CHARGE (nC)
I
D
= -9A
I
D
= -2A
WAVEFORMS IN
DESCENDING ORDER:
0
100
200
300
400
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= -2.5V, V
DD
= -10V, I
D
= -4.5A
t
d(OFF)
t
r
t
f
t
d(ON)
0
100
200
300
400
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= -4.5V, V
DD
= -10V, I
D
= -9A
t
d(OFF)
t
r
t
d(ON)
t
f
ITF87068SQT
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