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參數(shù)資料
| 型號： | IXEH40N120 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | NPT3 IGBT |
| 中文描述： | 60 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 80K |
| 代理商： | IXEH40N120 |
1 - 4
2003 IXYS All rights reserved
3
IXEH 40N120
IXEH 40N120D1
Features
NPT
3
IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
optional HiPerFRED
TM
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
TO-247 package
- industry standard outline
- epoxy meets UL 94V-0
Applications
AC drives
DC drives and choppers
Uninteruptible power supplies (UPS)
switched-mode and resonant-mode
power supplies
inductive heating, cookers
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
1200
V
V
GES
±
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
60
40
A
A
I
CM
V
CEK
V
=
±
15 V; R
= 39
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
50
V
CES
A
t
(SCSOA)
V
= 900V; V
GE
=
±
15 V; R
G
= 39
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
300
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 40 A; V
GE
= 15 V; T
VJ
= 25°C
2.4
2.8
3.0
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.4
mA
mA
0.4
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
85
50
440
50
6.1
3.0
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 25 A
2
nF
nC
250
R
thJC
0.42 K/W
Inductive load, T
= 125°C
V
CE
= 600 V; I
C
= 40 A
V
GE
= ±15 V; R
G
= 39
I
C25
V
CES
V
CE(sat) typ.
= 2.4 V
= 60 A
= 1200 V
NPT
3
IGBT
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXEH 40N120
IXEH 40N120D1
TO-247 AD
G
E
C
C (TAB)
C
G
E
C
G
E
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PDF描述 |
|---|---|
| IXEH40N120D1 | NPT3 IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXEH40N120D1 | 功能描述:IGBT 晶體管 40 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXEL40N400 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXEN4003A | 制造商:Freescale Semiconductor 功能描述:BEZEL PACK FOR 4247929 |
| IXEN60N120 | 功能描述:IGBT 晶體管 60 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXEN60N120_07 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:NPT3 IGBT in miniBLOC package |
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