- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄384546 > IXFH8N80 (IXYS CORP) N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻1.1Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | IXFH8N80 |
| 廠(chǎng)商： | IXYS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻1.1Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 8 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 206K |
| 代理商： | IXFH8N80 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH8N80
IXFH9N80
TO-247 AD (IXFH) Outline
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0
8N80
9N80
8
9
A
A
I
SM
Repetitive; pulse width limited by T
JM
8N80
9N80
32
36
A
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle
δ ≤
2 %
1.5
V
t
rr
T
J
=
T
J
= 125
°
C
25
°
C
250
400
ns
ns
Q
RM
T
J
=
T
J
= 125
°
C
25
°
C
0.5
1.0
μ
C
μ
C
I
RM
T
J
=
T
J
= 125
°
C
25
°
C
7.5
9.0
A
A
I
= I
-di/dt = 100 A/
μ
s,
V
R
= 100 V
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
4
7
S
C
iss
C
oss
C
rss
2600
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
240
pF
60
pF
t
d(on)
t
r
t
d(off)
t
f
35
ns
V
GS
R
G
= 4.7
(External)
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
ns
70
ns
35
ns
Q
g(on)
Q
gs
Q
gd
85
130
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
30
nC
40
70
nC
R
thJC
R
thCK
0.7
K/W
0.25
K/W
1. Gate
2. Drain
3. Source
4. Drain
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
0.61
20.80
15.75
5.45
4.90
2.70
2.10
0.00
1.90
3.55
5.59
4.32
6.15
Inches
Min.
.190
.090
.075
.045
.075
.024
.819
.620
.215
.193
.106
.083
.00
.075
.140
.220
.170
.242
Max.
5.21
2.54
2.16
1.40
2.13
0.80
21.34
16.13
BSC
5.10
2.90
2.30
0.10
2.10
3.65
6.20
4.83
BSC
Max.
.205
.100
.085
.055
.084
.031
.840
.635
BSC
.201
.114
.091
.004
.083
.144
.244
.190
BSC
A
A1
A2
b
b1
C
D
E
e
L
L1
L2
L3
L4
P
Q
R
S
TO-247 SMD Outline
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFK32N50Q | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.15Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| IXFK62N25 | 30V N-Channel PowerTrench MOSFET |
| IXFX62N25 | 30V N-Channel PowerTrench MOSFET |
| IXFN44N80 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.165Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| IXFN64N50P | PolarHVTM HiPerFETPower MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFH8N80S | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 8A I(D) | TO-247SMD |
| IXFH90N20Q | 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:HiPerFETTM Power MOSFETs Q-CLASS |
| IXFH94N30P3 | 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH94N30T | 功能描述:MOSFET Trench HiperFETs Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH96N15P | 功能描述:MOSFET 96 Amps 150V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。