- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362819 > IXFK35N50S TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 35A I(D) | TO-264VAR PDF資料下載
參數(shù)資料
| 型號： | IXFK35N50S |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 35A I(D) | TO-264VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 35A條（?。﹟對264VAR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IXFK35N50S |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
500
500
V
V
±
20
±
30
V
V
T
C
= 25
°
C
30N50Q
32N50Q
30N50Q
32N50Q
30
32
120
128
A
A
A
A
I
DM
T
C
= 25
°
C,
pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
1500
I
AR
E
AR
E
AS
dv/dt
32
A
45
mJ
mJ
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
416
W
-55 ... + 150
150
-55 ... + 150
°
C
°
C
°
C
1.6 mm (0.063 in) from case for 10 s 300
°
C
Mounting torque
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
500
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250 uA
V
DS
= V
GS
, I
D
= 4 mA
V
2.5
4.5
V
I
GSS
I
DSS
V
GS
=
±
20 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
±
100
nA
T
J
= 25
°
C
T
J
= 125
°
C
32N50Q
30N50Q
100
μ
A
mA
1
R
DS(on)
0.15
0.16
HiPerFET
TM
Power MOSFETs
Q-Class
PLUS 247
TM
(IXFK)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
(TAB)
TO-264 AA (IXFK)
98604D (06/02)
V
DSS
500 V 30 A 0.16
500 V 32 A 0.15
t
rr
≤
250 ns
I
D25
R
DS(on)
IXFK/IXFX 30N50Q
IXFK/IXFX 32N50Q
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFX32N50Q | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-247VAR |
| IXFK44N50S | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 44A I(D) | TO-264VAR |
| IXFK48N50S | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 48A I(D) | TO-264VAR |
| IXFX24N100 | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 24A I(D) | TO-247VAR |
| IXFX90N20QS | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 90A I(D) | TO-247SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFK360N10T | 功能描述:MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK360N15T2 | 功能描述:功率驅(qū)動器IC GigaMOS Trench T2 HiperFET PWR MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IXFK36N60 | 功能描述:MOSFET 600V 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK36N60P | 功能描述:MOSFET 600V 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK38N80Q2 | 功能描述:MOSFET 38 Amps 800V 0.22 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。