參數(shù)資料
型號： IXFP3N120
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs
中文描述： 3 A, 1200 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220, 3 PIN
文件頁數(shù)： 1/4頁
文件大小： 573K
代理商： IXFP3N120
2004 IXYS All rights reserved
DS99036B(07/04)
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1200
1200
V
V
V
GS
V
GSM
Continuous
±
20
±
30
V
Transient
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
3
A
A
A
12
3
E
AR
T
C
= 25
°
C
20
mJ
E
AS
700
mJ
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4.7
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10 V/ns
P
D
T
C
= 25
°
C
200
W
T
J
T
JM
T
stg
-55 to +150
150
-55 to +150
°
C
°
C
°
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
°
C
M
d
Mounting torque (TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220 4
TO-263 2
g
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
z
Low gate charge and capacitances
- easier to drive
- faster switching
z
International standard packages
z
Low R
DS (on)
z
Rated for unclamped Inductive load
Switching (UIS)
z
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1.5 mA
1200
2.5
V
V
5.0
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
50
μ
A
mA
2
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
4.5
HiPerFET
TM
Power MOSFETs
V
DSS
I
D25
R
DS(on)
t
rr
≤
300 ns
=1200 V
=
= 4.5
3 A
Preliminary Data Sheet
G
S
TO-263 (IXFA)
GDS
TO-220 (IXFP)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFA 3N120
IXFP 3N120
D (TAB)
D (TAB)
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