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參數(shù)資料
| 型號： | IXFX24N100 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 24A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 1KV交五（巴西）直| 24A條（?。﹟對247VAR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 134K |
| 代理商： | IXFX24N100 |
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, Note 1
T
C
= 25
°
C
24
96
24
A
A
A
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
60
mJ
3
J
dv/dt
I
S
5
V/ns
P
D
560
W
T
J
T
JM
T
stg
T
L
-55 ... +150
°
C
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
M
d
Mounting torque
TO-264
0.9/6
Nm/lb.in.
Weight
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
1000
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20 V, V
DS
= 0
3.0
5.0 V
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 2
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
2 mA
0.39
R
DS(on)
Single MOSFET Die
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98598B (8/02)
PLUS 247
TM
(IXFX)
G
D
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFK 24N100
IXFX 24N100
V
DSS
I
D25
R
DS(on)
= 0.39
= 1000 V
= 24 A
t
rr
≤
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
2002 IXYS All rights reserved
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| IXFX24N100F | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IXFX24N120Q2 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-Class |
| IXFX24N90Q | 功能描述:MOSFET 24 Amps 900V 0.45 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFX250N10P | 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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