參數(shù)資料
型號： IXTH15N70
廠商： InterFET Corporation
英文描述： N-Channel Enhancement Mode
中文描述： N溝道增強模式
文件頁數(shù)： 1/2頁
文件大小： 34K
代理商： IXTH15N70
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
I
XYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
700
700
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
15
60
A
A
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
TO-247 AD
N-Channel Enhancement Mode
IXTH
15N70
V
DSS
I
D (cont)
R
DS(on)
= 0.45
= 700 V
= 15 A
MegaMOS
TM
FET
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
700
V
V
2
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.45
Features
G
International standard package
JEDEC TO-247 AD
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
High commutating dv/dt rating
G
Fast switching times
Applications
G
Switch-mode and resonant-mode
power supplies
G
Motor controls
G
Uninterruptible Power Supplies (UPS)
G
DC choppers
Advantages
G
Easy to mount with 1 screw
(isolated mounting screw hole)
G
Space savings
G
High power density
94503C(5/96)
D (TAB)
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