參數(shù)資料
型號： IXTT6N120
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage Power MOSFET
中文描述： 6 A, 1200 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： TO-268, 3 PIN
文件頁數(shù)： 1/4頁
文件大小： 594K
代理商： IXTT6N120
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1200
1200
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25
°
C
6
A
I
DM
I
AR
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
24
A
6
A
E
AR
E
AS
25
mJ
500
mJ
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
300
W
°
C
°
C
°
C
-55 ... +150
150
-55 ... +150
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Mounting torque
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
TO-247 AD (IXTH)
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
DS99024B(01/04)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
=
250 μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
1200
V
V
GS(th)
V
DS
= V
GS
, I
D
=
250μ
A
2.5
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
μ
A
500
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
2.6
TO-268
(IXTT)
Case Style
(TAB)
G
S
High Voltage
Power MOSFET
IXTH 6N120
IXTT 6N120
V
DSS
I
D25
R
DS(on)
= 1200 V
= 6 A
= 2.6
N-Channel Enhancement Mode
Avalanche Rated
Features
z
International standard packages
z
Low R
DS (on)
HDMOS
TM
process
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
Preliminary Data Sheet
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