參數(shù)資料
型號(hào): J110A
廠商: InterFET Corporation
英文描述: N-Channel Silicon Junction Field-Effect Transistor
中文描述: N溝道硅結(jié)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 92K
代理商: J110A
B-50
01/99
J110, J110A
N-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ Commutators
¥ Analog Switches
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
50 mA
360 mW
3.27 mW/°C
TOD226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ110, SMPJ110A
At 25°C free air temperature:
J110
J110A
Process NJ450
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
I
D(OFF)
– 25
– 25
V
nA
V
mA
nA
I
G
= – 1 μA, V
DS
= V
V
GS
= – 15V, V
DS
= V
V
DS
= 5V, I
D
= 1 μA
V
DS
= 15V, V
GS
= V
V
DS
= 5V, V
GS
= – 10V
– 3
– 4
– 3
– 4
– 0.5
10
– 0.5
10
3
3
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
Drain Gate + Source Gate Capacitance
r
ds(on)
C
gd
C
gs
C
gd
+ C
gs
18
15
15
85
25
15
15
85
pF
pF
pF
V
GS
= , V
DS
< = 0.1V
V
DS
= V, V
GS
= – 10V
V
DS
= V, V
GS
= – 10V
V
DS
= V
GS
= V
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
Switching Characteristics
Typ
Typ
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
td
(on)
t
r
td
(off)
t
f
4
1
6
30
4
1
6
30
ns
ns
ns
ns
J110
1.5
– 5
150
J110A
1.5
– 5
150
V
DD
V
GS(OFF)
R
L
V
V
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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