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參數(shù)資料
| 型號(hào)： | J175 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel JFET(最大導(dǎo)通電阻125Ω，夾斷電流-10pA的P溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | P溝道場(chǎng)效應(yīng)（最大導(dǎo)通電阻125Ω，夾斷電流，10pA的P溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | J175 |
J/SST174 Series
Siliconix
P-37653—Rev. D, 25-Jul-94
3
Specifications
a
for J/SST176 and J/SST177
Limits
J/SST176
J/SST177
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
V
GS(off)
I
DSS
I
G
= 1 A , V
DS
= 0 V
V
DS
= –15 V, I
D
= –10 nA
V
DS
= –15 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
45
30
30
V
Gate-Source Cutoff Voltage
Saturation Drain Current
c
1
4
0.8
2.25
–2
–35
–1.5
–20
mA
Gate Reverse Current
I
GSS
0.01
1
1
T
A
= 125 C
5
Gate Operating Current
I
G
V
DG
= –15 V, I
D
= –1 mA
V
DS
= –15 V, V
GS
= 10 V
0.01
nA
Drain Cutoff Current
D( ff)
I
D(off)
–0.01
–1
–1
T
A
= 125 C
–5
Drain-Source On-Resistance
r
DS(on)
V
GS(F)
V
GS
= 0 V, V
DS
= –0.1 V
I
G
= –1 mA , V
DS
= 0 V
250
300
Gate-Source Forward Voltage
–0.7
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= –15 V, I
D
= –1 mA
f = 1 kHz
4.5
mS
Common-Source Output Conductance
g
os
r
ds(on)
C
iss
20
S
Drain-Source On-Resistance
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
V
DS
= 0 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 V, V
GS
= 10 V
f = 1 MHz
250
300
Common-Source Input Capacitance
20
Common-Source
Reverse Transfer Capacitance
C
rss
5
pF
Equivalent Input Noise Voltage
e
n
V
DG
= –10 V, I
D
= –1 mA
f = 1 kHz
20
nV
√
Hz
Switching
Turn On Time
Turn-On Time
t
d(on)
t
r
t
d(off)
t
f
10
V
GS( )
= 0 V, V
GS( )
= 10 V
S i hi
See Switching Circuit
15
ns
Turn-Off Time
10
20
Notes
a.
b.
c.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
PSCIA
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