參數(shù)資料
型號: J201
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel JFET(最小柵源擊穿電壓-40V的N溝道結(jié)型場效應(yīng)管)
中文描述: N溝道場效應(yīng)(最小柵源擊穿電壓至40V的N溝道結(jié)型場效應(yīng)管)
文件頁數(shù): 4/5頁
文件大?。?/td> 61K
代理商: J201
J/SST201 Series
4
Siliconix
P-37995—Rev. D, 11-Aug-94
Typical Characteristics (25 C Unless Noted)
2
0
–1.2
–1.6
–2
–0.8
–0.4
1.6
1.2
0.8
0.4
0
Transfer Characteristics
V
GS
– Gate-Source Voltage (V)
I
D
T
A
= –55 C
125 C
25 C
V
DS
= 10 V
V
GS(off)
= –1.5 V
500
0
–0.3
–0.2
–0.1
–0.4
–0.5
400
300
200
100
0
Transfer Characteristics
V
GS
– Gate-Source Voltage (V)
T
A
= –55 C
125 C
25 C
V
DS
= 10 V
V
GS(off)
= –0.7 V
I
D
A
0.1
1
0.01
4
–1.2
–2
–1.6
–0.8
–0.4
0
3.2
2.4
1.6
0.8
0
0.01
0.1
1
200
160
120
80
40
0
2000
1600
1200
800
400
0
A
V
I
D
– Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
Transconductance vs. Gate-Source Voltage
T
A
= –55 C
125 C
g
f
V
GS
– Gate-Source Voltage (V)
On-Resistance vs. Drain Current
I
D
– Drain Current (mA)
25 C
V
GS(off)
= –0.7 V
–1.5 V
V
GS(off)
= –0.7 V
–1.5 V
1.5
0
–0.3
–0.4
–0.2
–0.1
–0.5
1.2
0.9
0.6
0.3
0
Transconductance vs. Gate-Source Voltage
T
A
= –55 C
125 C
g
f
V
GS
– Gate-Source Voltage (V)
25 C
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –0.7 V
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –1.5 V
A
V
g
fs
R
L
R
L
g
os
1
Assume V
DD
= 15 V, V
DS
= 5 V
10 V
I
D
R
L
r
D
)
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