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參數(shù)資料
| 型號(hào)： | J204 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-25V的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 25V的的N溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | J204 |
J/SST201 Series
Siliconix
P-37995—Rev. D, 11-Aug-94
3
Typical Characteristics (25 C Unless Noted)
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
0
15
30
Gate Leakage Current
V
DG
– Drain-Gate Voltage (V)
–
I
G
I
GSS
@ 125 C
I
GSS
@ 25 C
T
A
= 125 C
T
A
= 25 C
I
D
= 100 A
I
D
= 500 A
I
G
@ I
D
= 500 A
I
D
= 100 A
10
0
8
6
4
2
0
–5
–4
–3
–2
–1
5
4
1
3
2
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
V
GS(off)
– Gate-Source Cutoff Voltage (V)
–
I
D
g
f
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
1500
0
–3
–5
–4
–2
–1
1200
900
600
300
0
0.01
0.1
1
2
1.6
0.8
0.4
0
10
8
4
2
0
400
0
12
16
4
20
360
160
80
0
2
0
12
16
8
4
20
1.6
1.2
0.8
0.4
0
Output Characteristics
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
Output Characteristics
I
D
– Drain Current (mA)
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
g
f
–
I
D
–
I
D
T
A
= –55 C
125 C
–0.2 V
–0.4 V
V
GS
= 0 V
–0.6 V
–0.9 V
–0.1 V
–0.3 V
r
DS
@ I
D
= 100 A, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
r
DS
g
os
–0.3 V
6
1.2
240
8
V
GS(off)
= –1.5 V
V
GS(off)
= –0.7 V
A
25 C
–0.5 V
–1.2 V
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –1.5 V
V
GS
= 0 V
S
g
–
r
D
–
)
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