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參數(shù)資料
| 型號： | J210 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-25V，最小飽和漏極電流2mA的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | N溝道場效應(yīng)（最小柵源擊穿電壓- 25V的，最小飽和漏極電流二毫安的N溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 70K |
| 代理商： | J210 |
J/SSTJ210 Series
2
Siliconix
S-52428—Rev. D, 14-Apr-97
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
–25 V
. . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 C
. . . . . . . . . . . . . . .
–55 to 150 C
Operating Junction Temperature
Power Dissipation
a
–55 to 150 C
350 mW
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.8 mW/ C above 25 C
Specifications
a
Limits
J210
J/SSTJ211
J/SSTJ212
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–35
–25
–25
–25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 1 nA
–1
–3
–2.5
–4.5
–4
–6
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
2
15
7
20
15
40
mA
Gate Reverse Current
I
GSS
V
GS
= –15 V, V
DS
= 0 V
–1
–100
–100
–100
pA
T
A
= 125 C
–0.5
nA
Gate Operating Current
b
I
G
V
DG
= 10 V, I
D
= 1 mA
–1
pA
Drain Cutoff Current
I
D(off)
V
DS
= 10 V, V
GS
= –8 V
1
Gate-Source Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
c
g
fs
V
DS
= 15 V, V
= 0 V
f = 1 kHz
4
12
6
12
7
12
mS
Common-Source
Output Conductance
g
os
GS
150
200
200
S
Common-Source
Input Capacitance
C
iss
V
DS
= 15 V, V
= 0 V
f = 1 MHz
4
pF
Common-Source
Reverse Transfer Capacitance
C
rss
GS
1.5
Equivalent Input Noise Voltage
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
5
nV
√
Hz
Notes
a.
b.
c.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
NZF
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|---|---|
| J210_D27Z | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| J210_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| J210_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET |
| J210_TO-92 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET |
| J2-100003 | 制造商:OTTO Engineering Inc 功能描述:2-AXIS X-DUCER, NO |
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