- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379246 > JANHCB1N5550 (Electronic Theatre Controls, Inc.) This specification covers the performance requirements for silicon, general purpose, PDF資料下載
參數(shù)資料
| 型號： | JANHCB1N5550 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | This specification covers the performance requirements for silicon, general purpose, |
| 中文描述： | 該規(guī)范涵蓋硅，通用性能要求， |
| 文件頁數(shù)： | 14/28頁 |
| 文件大?。?/td> | 202K |
| 代理商： | JANHCB1N5550 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁當前第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
MIL-PRF-19500/420H
14
* 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
Method
C2
1056
C2
1051
C2
2036
*
C5
3101
or
4081
C6
1027
Condition
0
°
C to +100
°
C, 10 cycles.
-55
°
C to +175
°
C, 25 cycles.
Tension: Test condition A; weight = 5 pounds; t = 30 seconds.
Lead fatigue: Test condition E; weight 2 pounds.
NOTE: Both tension and lead fatigue are not applicable for US devices.
See 4.5.5.
T
J
= 150
°
C minimum (see 4.5.2.1). I
O
= I
O2
= 3 A dc minimum; adjust I
O
to
achieve the required T
J
; apply V
R
= rated
V
RWM
(see col. 3 of 1.3), f = 50-60 Hz
(see 4.5.2.1).
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein. See table III for delta limits when applicable.
4.5 Methods of inspection. Methods of inspection shall be as specified in appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Burn-in and life tests. These tests shall be conducted with a half-sine waveform of the specified peak
voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified
average rectified current. The forward conduction angle of the rectified current shall be neither greater than 180
degrees, nor less than 150 degrees.
* 4.5.2.1 Free air burn-in. Deliberate heat sinking, baffles to create an oven, forced air-cooling or heating is
prohibited unless otherwise approved by the qualifying activity. The use of a current limiting or ballast resistor is
permitted provided that each DUT still sees the full P
t
(minimum) and that the minimum applied voltage, where
applicable, is maintained through out the burn-in period. T
J
= 135
°
C minimum for screening and T
J
= 150
°
C for 4.4.2
and 4.4.3 life tests. Use method 3100 of MIL-STD-750 to measure T
J
.
4.5.3 Scope display evaluation. Scope display evaluation shall be sharp and stable in accordance with method
4023 of MIL-STD-750. Scope display may be performed on ATE (automatic test equipment) for screening only, with
the approval of the qualifying activity. Scope display in table I, subgroup 4 shall be performed on a scope. The
reverse current (I
BR
) over the knee shall be 500
μ
A peak.
相關PDF資料 |
PDF描述 |
|---|---|
| JANHCB1N5551 | This specification covers the performance requirements for silicon, general purpose, |
| JANHCB1N5552 | Circular Connector; No. of Contacts:66; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-35 RoHS Compliant: No |
| JANHCB1N5553 | Circular Connector; No. of Contacts:66; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-35 RoHS Compliant: No |
| JANHCB1N5554 | JT 66C 66#22M SKT WALL RECP |
| JANHCD1N5550 | Circular Connector; No. of Contacts:66; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-35 RoHS Compliant: No |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANHCB1N5551 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:This specification covers the performance requirements for silicon, general purpose, |
| JANHCB1N5552 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:This specification covers the performance requirements for silicon, general purpose, |
| JANHCB1N5553 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:This specification covers the performance requirements for silicon, general purpose, |
| JANHCB1N5554 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:This specification covers the performance requirements for silicon, general purpose, |
| JANHCB2N2221A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-18 |
發(fā)布緊急采購，3分鐘左右您將得到回復。