參數(shù)資料
型號(hào)： JANHCE1N5806
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 參考電壓二極管
英文描述： 2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS
中文描述： 2.5 A, SILICON, RECTIFIER DIODE
封裝： DIE-1
文件頁(yè)數(shù)： 15/28頁(yè)
文件大?。?/td> 202K
代理商： JANHCE1N5806
MIL-PRF-19500/420H
15
4.5.4 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test
method 3101 or 4081 of MIL-STD-750. Read and record data in accordance with group E herein and shall be
included in the qualification report. Forced moving air or draft shall not be permitted across the devices during
test. The maximum limit under these test condition shall be R
θ
≤
22
°
C/W for L = .375 (9.53 mm);
R
θ
JEC
≤
11
°
C/W for L= 0 (US version). The following conditions shall apply:
a. I
H
.............................2 A minimum.
b. t
H
.............................Thermal equilibrium.
c. I
M
.............................1.0 mA to 10 mA.
d. t
MD
.............................100
μ
s maximum.
The device shall be allowed to reach equilibrium at current I
H
before the measurement shall be made (t
H
≥
25 sec).
LS = Lead spacing = .375 inch (9.53 mm) minimum for leaded devices and LS = 0 minimum for unleaded devices as
defined (see figure 8):
FIGURE 8. Mounting arrangement.
4.5.5 Peak reverse power test. A 20 microsecond half-sine waveform of current shall be used and peak reverse
power shall be determined by the product of peak reverse voltage and peak reverse current. A 20 microsecond
square waveform may also be used with the approval of the qualifying activity (see figure 9).
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