參數(shù)資料
型號(hào)： JANHCE1N5807
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 參考電壓二極管
英文描述： 6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS
中文描述： 6 A, SILICON, RECTIFIER DIODE
封裝： DIE-1
文件頁(yè)數(shù)： 21/28頁(yè)
文件大?。?/td> 202K
代理商： JANHCE1N5807
MIL-PRF-19500/420H
21
* TABLE III. Delta requirements. 1/ 2/ 3/ 4/ 5/
Step
Inspection
MIL-STD-750
Symbol
Limits
Unit
Method
4016
Conditions
Min
Max
1.
Reverse current
leaking change
DC method
I
R1
4/
±100 percent of
initial value or
±250 nA dc,
whichever is
greater.
±50 mV dc
maximum
change from
previous
measured value.
2.
Forward voltage
change
4011
I
= 1.5 A dc;
pulsed (see 4.5.1)
V
F1
4/
1/ The electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table III herein, step 2.
b. Subgroup 4, see table III herein, step 2.
c.
Subgroup 5, see table III herein, steps 1 and 2.
2/ The electrical measurements for table VIb (JAN, , JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table III herein, step 1.
b. Subgroup 6, see table III herein, step 1.
3/ The electrical measurements for table VII of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table III herein, step 1 (JANS).
b. Subgroup 6, see table III herein, step 1 and 2 (JANS), step 1 (JAN, JANTX, JANTXV and).
4/ Devices which exceed the table I limits for this test shall not be accepted.
5/ The electrical measurements for table IX of MIL-PRF-19500 are as follows:
a. Subgroup 2 and 10, see table III herein, step 1 and 2.
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