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參數(shù)資料
| 型號： | JANHCE1N5809 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
| 中文描述： | 6 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-1 |
| 文件頁數(shù)： | 12/28頁 |
| 文件大?。?/td> | 202K |
| 代理商： | JANHCE1N5809 |
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MIL-PRF-19500/420H
12
* 4.3.1 Thermal impedance Z
θ
accordance with method 3101 of MIL-STD-750. The maximum screen limit shall be developed by the supplier using
statistical methods and it shall not exceed the table I, subgroup 2 herein. See 4.4.1 for test conditions.
4.3.1.1 Thermal impedance (Z
θ
measurements) for initial qualification or requalification. The Z
θ
measurements shall be performed in accordance with method 3101 of MIL-STD-750 (read and record date Z
θ
).
Z
θ
shall be supplied on one lot (500 pieces minimum and a thermal response curve shall be submitted.) Twenty-
two of these samples shall be serialized and provided to the qualifying activity for correlation prior to shipment of
parts. Measurements conditions shall be in accordance with 4.4.1.
* 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.2, 4.5.2.1) adjust I
O
to achieve
the required TJ.
4.3.3 Screening (JANHC and JANKC). Screening of die shall be in accordance with appendix G of
MIL-PRF-19500. As a minimum, die shall be 100-percent probed to ensure compliance with table I, subgroup 2.
Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements.
* 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. The following test conditions shall be used for Z
θ
JX
, table I: Z
θ
JX
≤
1.5
°
C/W.
a.
I
M
............................. 1 mA to 10 mA.
b.
I
H
.............................. 5 A minimum.
c.
t
H
.............................. 10 ms.
d.
t
MD
........................... 100
μ
s maximum.
e.
t
SW
........................... 5
μ
s maximum.
measurements for screening. The Z
measurements shall be performed in
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| JANHCE1N6391 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER, DIE, CO - Bulk |
| JANHCE1N6392 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER, DIE, CO - Bulk |
| JANHCF1N58011 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
| JANHCF1N5802 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
| JANHCF1N5804 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
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