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  • 參數(shù)資料
    型號: JS28F320J3A-150
    廠商: Intel Corp.
    英文描述: Intel StrataFlash Memory (J3)
    中文描述: 英特爾StrataFlash存儲器(J3)
    文件頁數(shù): 24/72頁
    文件大?。?/td> 905K
    代理商: JS28F320J3A-150
    256-Mbit J3 (x8/x16)
    24
    Datasheet
    0606_16
    NOTES:
    1. CE
    X
    low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE
    X
    high is defined at the
    first edge of CE0, CE1, or CE2 that disables the device (see
    Table 13
    ).
    2. When reading the flash array a faster t
    GLQV
    (R16) applies. For non-array reads, R4 applies (i.e.: Status
    Register reads, query reads, or device identifier reads).
    NOTE:
    CE
    X
    low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE
    X
    high is defined at
    the first edge of CE0, CE1, or CE2 that disables the device (see
    Table 13
    ).
    Figure 10. 4-Word Page Mode Read Waveform
    00
    01
    10
    11
    1
    2
    3
    4
    R10
    R9
    R15
    R10
    R5
    R8
    R7
    R6
    R4
    R3
    R1
    R2
    A[MAX:3] [A]
    A[2:1] [A]
    CEx [E]
    OE# [G]
    WE# [W]
    D[15:0] [Q]
    RP# [P]
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