參數(shù)資料
型號(hào): K3S7V2000M-TC20
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
中文描述: 6400位(4Mx16 / 2Mx32)同步MASKROM
文件頁(yè)數(shù): 22/27頁(yè)
文件大?。?/td> 1080K
代理商: K3S7V2000M-TC20
K3S7V2000M-TC
Synch. MROM
RD
PRE
Q
0
Q
0
Q
1
Q
0
Q
1
RD
Q
0
Q
1
Q
0
Q
1
Q
0
Q
1
Q
1
3. Read interrupt operation by issuing the precharge or Burst Stop Command
CLK
CMD
CLK
CMD
QB
1
QB
2
RD
QB
3
RD
A
B
QB
0
QB
1
QB
2
QB
3
QB
0
QB
1
QB
2
QB
3
QB
0
Note 2
Data(CL2)
Data(CL3)
Data(CL4)
*Note :
1. By " Interrupt", It is meant to stop burst read by external command before the end of burst.
By "CAS Interrupt", to stop burst read by CAS access.
2. CAS to CAS delay. (=1CLK)
2.
CAS Interrupt
Read interrupted by Read (BL=4)
Note 1
CLK
CMD
ADD
CASE I ) Issued read Interrupt command during burst read operation period.
RD
PRE
Q
0
Q
0
Q
0
Note 2
RD
STOP
Q
0
Q
0
Q
0
CLK
CMD
CLK
CMD
CASE II ) Issued read Interrupt command between read command and data out.
*Note :
1. The data bus goes to High-Z after CAS Latency from the burst stop (or precharge) command.
2. Valid output data will last up to CL-1 clock cycle from PRE command.
Note 2
Note 1
Note 1
Technical Notes
(Continuous)
Data(CL2)
Data(CL3)
Data(CL4)
Data(CL2)
Data(CL3)
Data(CL4)
Data(CL2)
Data(CL3)
Data(CL4)
Data(CL2)
Data(CL3)
Data(CL4)
STOP
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