參數(shù)資料
型號(hào)： K4B1G0446C-ZCF7
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb C-die DDR3 SDRAM Specification
中文描述： 1Gb的?芯片的DDR3 SDRAM規(guī)范
文件頁(yè)數(shù)： 27/63頁(yè)
文件大?。?/td> 1255K
代理商： K4B1G0446C-ZCF7
Page 27 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
Note :
1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage
changes after calibration, see following section on voltage and temperature sensitivity
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS
3. Pull-down and pull-up ODT resistors are recommended to be calibrated at 0.5XVDDQ. Other calibration schemes may be used to achieve the linearity
spec shown above, e.g. calibration at 0.2XVDDQ and 0.8XVDDQ.
4. Not a specification requirement, but a design guide line
5. Measurement definition for RTT:
Apply VIH(ac) to pin under test and measure current I(VIH(ac)), then apply VIL(ac) to pin under test and measure current I(VIL(ac)) perspectively
6. Measurement definition for VM and
VM : Measure voltage (VM) at test pin (midpoint) with no load
RTT =
VIH(ac) - VIL(ac)
I(VIH(ac)) - I(VIL(ac))
VM =
2 x VM
VDDQ
x 100
- 1
If temperature and/or voltage change after calibration, the tolerance limits widen according to table below
T = T - T(@calibration);
V = VDDQ - VDDQ (@calibration); VDD = VDDQ
[ Table 26 ] ODT Sensitivity Definition
[ Table 27 ] ODT Voltage and Temperature Sensitivity
These parameters may not be subject to production test. They are verified by design and characterization.
Min
Max
Units
RTT
0.9 - dR
TT
dT * |
T| - dR
TT
dV * |
V|
1.6 + dR
TT
dT * |
T| + dR
TT
dV * |
V|
RZQ/2,4,6,8,12
Min
Max
Units
dR
TT
dT
0
1.5
%/
°
C
dR
TT
dV
0
0.15
%/mV
9.8.2 ODT Temperature and Voltage sensitivity
相關(guān)PDF資料
PDF描述
K4B1G0446C-ZCG9 1Gb C-die DDR3 SDRAM Specification
K4B1G0846C-CF8 1Gb C-die DDR3 SDRAM Specification
K4B1G0846C-ZCF7 1Gb C-die DDR3 SDRAM Specification
K4B1G0846C-ZCG9 1Gb C-die DDR3 SDRAM Specification
K4B1G1646C-CF8 1Gb C-die DDR3 SDRAM Specification
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4B1G0446C-ZCG9 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb C-die DDR3 SDRAM Specification
K4B1G0446D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification
K4B1G0446D-HCF7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification
K4B1G0446D-HCF8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification
K4B1G0446D-HCH9 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*