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參數(shù)資料
| 型號： | K4B1G0446C-ZCF7 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb C-die DDR3 SDRAM Specification |
| 中文描述： | 1Gb的?芯片的DDR3 SDRAM規(guī)范 |
| 文件頁數(shù)： | 3/63頁 |
| 文件大?。?/td> | 1255K |
| 代理商： | K4B1G0446C-ZCF7 |
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Page 3 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
1.0 Ordering Information ....................................................................................................................................................4
2.0 Key Features .................................................................................................................................................................4
3.0 Package pinout/Mechanical Dimension & Addressing .............................................................................................5
3.1 x4 Package Pinout (Top view) : 94ball FBGA Package(78balls + 16 balls of support balls)
..........................................5
3.2 x8 Package Pinout (Top view) : 94ball FBGA Package(78balls + 16 balls of support balls)
..........................................6
3.3 x16 Package Pinout (Top view) : 112ball FBGA Package(96balls + 16 balls of support balls)
......................................7
3.4 FBGA Package Dimension (x4)
...................................................................................................................................8
3.5 FBGA Package Dimension (x8)
...................................................................................................................................9
3.6 FBGA Package Dimension (x16)
...............................................................................................................................10
4.0 Input/Output Functional Description ........................................................................................................................11
5.0 DDR3 SDRAM Addressing .........................................................................................................................................12
6.0 Absolute Maximum Ratings .......................................................................................................................................14
6.1 Absolute Maximum DC Ratings
................................................................................................................................14
6.2 DRAM Component Operating Temperature Range
....................................................................................................14
7.0 AC & DC Operating Conditions .................................................................................................................................14
7.1 Recommended DC operating Conditions (SSTL_1.5)
.................................................................................................14
8.0 AC & DC Input Measurement Levels .........................................................................................................................15
8.1 AC and DC Logic input levels for single-ended signals
.............................................................................................15
8.2 Differential swing requirement for differntial signals
................................................................................................16
8.2.1 Single-ended requirements for differential signals
............................................................................................17
8.3 AC and DC logic input levels for Differential Signals
.................................................................................................18
8.4 Differential Input Cross Point Voltage
.......................................................................................................................18
8.5 Slew rate definition for Single Ended Input Signals
...................................................................................................19
8.5.1 Input Slew Rate for Input Setup Time (tIS) and Data Setup Time (tDS)
...............................................................19
8.5.2 Input Slew Rate for Input Hold Time (tIH) and Data Hold Time (tDH)
..................................................................19
8.6 Slew rate definition for Differential Input Signals
......................................................................................................19
9.0 AC and DC Output Measurement Levels.................................................................................................................. 20
9.1 Single Ended AC and DC Output Levels
....................................................................................................................20
9.2 Differential AC and DC Output Levels
.......................................................................................................................20
9.3.Single Ended Output Slew Rate
................................................................................................................................ 21
9.4 Differential Output Slew Rate
....................................................................................................................................21
9.5 Reference Load for AC Timing and Output Slew Rate
................................................................................................22
9.6 Overshoot/Undershoot Specification
........................................................................................................................23
9.6.1 Address and Control Overshoot and Undershoot specifications
.......................................................................23
9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot specifications
..........................................................23
9.7 34 ohm Output Driver DC Electrical Characteristics
..................................................................................................24
9.7.1 Output Drive Temperature and Voltage sensitivity
............................................................................................25
9.8 On-Die Termination (ODT) Levels and I-V Characteristics
..........................................................................................25
9.8.1 ODT DC electrical characteristics
.....................................................................................................................26
9.8.2 ODT Temperature and Voltage sensitivity
......................................................................................................... 27
9.9 ODT Timing Definitions
............................................................................................................................................ 28
9.9.1 Test Load for ODT Timings
............................................................................................................................... 28
9.9.2 ODT Timing Definition
......................................................................................................................................28
10.0 Idd Specification Parameters and Test Conditions ...............................................................................................31
10.1 IDD Measurement Conditions
.................................................................................................................................31
10.2 IDD Specifications
..................................................................................................................................................41
11.0 Input/Output Capacitance ........................................................................................................................................43
12.0 Electrical Characteristics and AC timing for DDR3-800 to DDR3-1600 ................................................................44
12.1 Clock specification
.................................................................................................................................................44
12.2 Clock Jitter Specification
........................................................................................................................................45
12.3 Refresh Parameters by Device Density
...................................................................................................................46
12.4 Standard Speed Bins
..............................................................................................................................................46
13.0 Timing Parameters by Speed Grade ....................................................................................................................... 48
Table Contents
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| K4B1G0446C-ZCG9 | 1Gb C-die DDR3 SDRAM Specification |
| K4B1G0846C-CF8 | 1Gb C-die DDR3 SDRAM Specification |
| K4B1G0846C-ZCF7 | 1Gb C-die DDR3 SDRAM Specification |
| K4B1G0846C-ZCG9 | 1Gb C-die DDR3 SDRAM Specification |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4B1G0446C-ZCG9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb C-die DDR3 SDRAM Specification |
| K4B1G0446D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G0446D-HCF7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G0446D-HCF8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G0446D-HCH9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
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