參數(shù)資料
型號(hào)： K4B1G0446C
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb C-die DDR3 SDRAM Specification
中文描述： 1Gb的?芯片的DDR3 SDRAM規(guī)范
文件頁(yè)數(shù)： 23/63頁(yè)
文件大?。?/td> 1255K
代理商： K4B1G0446C
Page 23 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
AC Overshoot/Undershoot Specification for Address and Control Pins
(A0-A12, BA0-BA2, CS, RAS, CAS, WE, CKE, ODT)
[ Table 20 ] AC overshoot/undershoot specification for Address and Control pins
Parameter
Specification
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Maximum peak amplitude allowed for overshoot area (See Figure 8)
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed for undershoot area (See Figure 8)
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area above VDD (See Figure 8)
0.67V-ns
0.5V-ns
0.4V-ns
0.33V-ns
Maximum undershoot area below VSS (See Figure 8)
0.67V-ns
0.5V-ns
0.4V-ns
0.33V-ns
Overshoot Area
Maximum Amplitude
V
DD
Undershoot Area
Maximum Amplitude
V
SS
Volts
(V)
Time (ns)
AC Overshoot/Undershoot Specification for Clock, Data, Strobe, and Mask Pins
(DQ, DQS, DQS, DM, CK, CK)
[ Table 21 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask
Parameter
Specification
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Maximum peak amplitude allowed for overshoot area (See Figure 9)
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed for undershoot area (See Figure 9)
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area above VDDQ (See Figure 9)
0.25V-ns
0.19V-ns
0.15V-ns
0.13V-ns
Maximum undershoot area below VSSQ (See Figure 9)
0.25V-ns
0.19V-ns
0.15V-ns
0.13V-ns
Overshoot Area
Maximum Amplitude
V
DDQ
Undershoot Area
Maximum Amplitude
V
SSQ
Volts
(V)
Time (ns)
9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot specifications
9.6 Overshoot/Undershoot Specification
9.6.1 Address and Control Overshoot and Undershoot specifications
Figure 10. Address and Control Overshoot and Undershoot definition
Figure 11. Clock, Data, Strobe and Mask Overshoot and Undershoot definition
相關(guān)PDF資料
PDF描述
K4B1G0446C-CF8 1Gb C-die DDR3 SDRAM Specification
K4B1G0446C-ZCF7 1Gb C-die DDR3 SDRAM Specification
K4B1G0446C-ZCG9 1Gb C-die DDR3 SDRAM Specification
K4B1G0846C-CF8 1Gb C-die DDR3 SDRAM Specification
K4B1G0846C-ZCF7 1Gb C-die DDR3 SDRAM Specification
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4B1G0446C-CF8 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb C-die DDR3 SDRAM Specification
K4B1G0446C-ZCF7 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb C-die DDR3 SDRAM Specification
K4B1G0446C-ZCG9 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb C-die DDR3 SDRAM Specification
K4B1G0446D 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification
K4B1G0446D-HCF7 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification
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