參數(shù)資料
型號(hào): K4B1G0846C-CF8
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb C-die DDR3 SDRAM Specification
中文描述: 1Gb的?芯片的DDR3 SDRAM規(guī)范
文件頁(yè)數(shù): 30/63頁(yè)
文件大?。?/td> 1255K
代理商: K4B1G0846C-CF8
Page 30 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
CK
CK
Begin point : Rising edge of CK - CK
with ODT being first registered low
t
AOFPD
VTT
DQ, DM
DQS , DQS
TDQS , TDQS
VRTT_Nom
T
SW1
T
SW2
V
SW1
V
SW2
End point Extrapolated point at VRTT_Nom
VSSQ
CK
CK
Begin point : Rising edge of CK - CK
defined by the end point of ODTLcnw
t
ADC
VTT
DQ, DM
DQS , DQS
TDQS , TDQS
VRTT_Nom
T
SW11
T
SW21
V
SW1
End point Extrapolated point at VRTT_Nom
VRTT_Wr
End point Extrapolated point at VRTT_Wr
t
ADC
V
SW2
Begin point : Rising edge of CK - CK defined by
the end point of ODTLcwn4 or ODTLcwn8
End point
Extrapolated point
at VRTT_Nom
T
SW12
T
SW22
VRTT_Nom
VSSQ
Figure 18. Definition of tAOFPD
Figure 19. Definition of tADC
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