參數(shù)資料
型號(hào)： K4B1G1646C-ZCF7
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb C-die DDR3 SDRAM Specification
中文描述： 1Gb的?芯片的DDR3 SDRAM規(guī)范
文件頁(yè)數(shù)： 14/63頁(yè)
文件大?。?/td> 1255K
代理商： K4B1G1646C-ZCF7
Page 14 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
6.1 Absolute Maximum DC Ratings
[ Table 4 ] Absolute Maximum DC Ratings
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
standard.
3. VDD and VDDQ must be within 300mV of each other at all times;and VREF must be not greater than 0.6xVDDQ, When VDD and VDDQ are less than
500mV; VREF may be equal to or less than 300mV.
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
-0.4 V ~ 1.975 V
V
1,3
VDDQ
Voltage on VDDQ pin relative to Vss
-0.4 V ~ 1.975 V
V
1,3
V
IN,
V
OUT
Voltage on any pin relative to Vss
-0.4 V ~ 1.975 V
V
1
T
STG
Storage Temperature
-55 to +100
°
C
7.0 AC & DC Operating Conditions
7.1 Recommended DC operating Conditions (SSTL_1.5)
[ Table 6 ] Recommended DC Operating Conditions
Note :
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
Supply Voltage
1.425
1.5
1.575
V
1,2
VDDQ
Supply Voltage for Output
1.425
1.5
1.575
V
1,2
[ Table 5 ] Temperature Range
Note :
1. Operating Temperature T
OPER
is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the
JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case tem-
perature must be maintained between 0-85
°
C under all operating conditions
3. Some applications require operation of the Extended Temperature Range between 85
°
C and 95
°
C case temperature. Full specifications are guaran-
teed in this range, but the following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9us. It is also possible to specify a component
with 1X refresh (tREFI to 7.8us) in the Extended Temperature Range. Please refer to supplier data sheet and/or the DIMM SPD for option availability.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with
Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 =
0b). Please refer to the supplier data sheet and/or the DIMM SPD for Auto Self-Refresh option availability, Extended Temperature Range support and
tREFI requirements in the Extended Temperature Range.
Symbol
Parameter
rating
Unit
Notes
T
OPER
Normal Operating Temperature Range
0 to 85
°
C
1,2
Extended Temperature Range (Optional)
85 to 95
°
C
1,3
6.2 DRAM Component Operating Temperature Range
6.0 Absolute Maximum Ratings
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