- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374254 > K4B1G1646C-ZCF7 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Gb C-die DDR3 SDRAM Specification PDF資料下載
參數(shù)資料
| 型號： | K4B1G1646C-ZCF7 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb C-die DDR3 SDRAM Specification |
| 中文描述： | 1Gb的?芯片的DDR3 SDRAM規(guī)范 |
| 文件頁數(shù)： | 21/63頁 |
| 文件大?。?/td> | 1255K |
| 代理商： | K4B1G1646C-ZCF7 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁當(dāng)前第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁
Page 21 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
V
DDQ
V
OH(AC)
V
REF
V
OL(AC)
V
SSQ
delta TRS
delta TFS
9.4 Differential Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOLdiff(AC) and
VOHdiff(AC) for differential signals as shown inTable 18 and figure 8.
[ Table 18 ] Differential Output slew rate definition
[ Table 19 ] Differential Output slew rate
Note : Output slew rate is verified by design and characterization, and may not be subject to production test.
For Ron=RZQ/7 setting
Description
Measured
Defined by
From
To
Differential output slew rate for rising edge
VOLdiff(AC)
VOHdiff(AC)
VOHdiff(AC)-VOLdiff(AC)
Delta TRdiff
Differential output slew rate for falling edge
VOHdiff(AC)
VOLdiff(AC)
VOHdiff(AC)-VOLdiff(AC)
Delta TFdiff
Parameter
Symbol
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Units
Min
Max
Min
Max
Min
Max
Min
Max
Single ended output slew rate
SRQse
5
10
5
10
5
10
TBD
10
V/ns
V
DDQ
V
OHdiff(AC)
V
REF
V
OLdiff(AC)
V
SSQ
delta TRdiff
delta TFdiff
Figure 7. Single Ended Output Slew Rate definition
Figure 8. Differential Output Slew Rate definition
9.3.Single Ended Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC)
for single ended signals as shown in Table 16 and figure 7.
[ Table 16 ] Single Ended Output slew rate definition
[ Table 17 ] Single Ended Output slew rate
Note : Output slew rate is verified by design and characterization, and may not be subject to production test.
For Ron=RZQ/7 setting
Description
Measured
Defined by
From
To
Single ended output slew rate for rising edge
VOL(AC)
VOH(AC)
VOH(AC)-VOL(AC)
Delta TRse
Single ended output slew rate for falling edge
VOH(AC)
VOL(AC)
VOH(AC)-VOL(AC)
Delta TFse
Parameter
Symbol
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Units
Min
Max
Min
Max
Min
Max
Min
Max
Single ended output slew rate
SRQse
2.5
5
2.5
5
2.5
5
TBD
5
V/ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4B1G1646C-ZCG9 | 1Gb C-die DDR3 SDRAM Specification |
| K4C560838C-TCD3 | 256Mb Network-DRAM |
| K4C560838C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 200V; Case Size: 16x31.5 mm; Packaging: Bulk |
| K4C560838C-TCDA | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk |
| K4C561638C-TCD3 | 256Mb Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4B1G1646C-ZCG9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb C-die DDR3 SDRAM Specification |
| K4B1G1646D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G1646D-HCF7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G1646D-HCF8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G1646D-HCH9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。