參數(shù)資料
型號: K4B1G1646C-ZCF7
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb C-die DDR3 SDRAM Specification
中文描述: 1Gb的?芯片的DDR3 SDRAM規(guī)范
文件頁數(shù): 22/63頁
文件大?。?/td> 1255K
代理商: K4B1G1646C-ZCF7
Page 22 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
VDDQ
DUT
DQ
DQS
DQS
V
TT
= V
DDQ
/2
25
CK/CK
9.5 Reference Load for AC Timing and Output Slew Rate
Figure 9 represents the effective reference load of 25 ohms used in defining the relevant AC timing parameters of the device as well as output slew rate
measurements.
It is not intended as a precise representation of any particular system environment of a depiction of the actual load presented by a production tester. Sys-
tem designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers correlate to their
production test conditions, generally one or more coaxial transmission lines terminated at the tester electronics.
Figure 9. Reference Load for AC Timing and Output Slew Rate
Reference
Point
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