- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374254 > K4B1G1646C-ZCF7 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Gb C-die DDR3 SDRAM Specification PDF資料下載
參數(shù)資料
| 型號： | K4B1G1646C-ZCF7 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb C-die DDR3 SDRAM Specification |
| 中文描述： | 1Gb的?芯片的DDR3 SDRAM規(guī)范 |
| 文件頁數(shù)： | 31/63頁 |
| 文件大?。?/td> | 1255K |
| 代理商： | K4B1G1646C-ZCF7 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁當前第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁
Page 31 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
10.1 IDD Measurement Conditions
Within the tables provided further down, an overview about the IDD measurement conditions is provided as follows:
[ Table 30 ] Overview of Tables providing IDD Measurement Conditions and DRAM Behavior
Within the tables about IDD measurement conditions, the following definitions are used:
LOW is defined as V
IN
<= V
ILAC
(max.); HIGH is defined as V
IN
>= V
IHAC
(min.);
STABLE is defined as inputs are stable at a HIGH or LOW level
FLOATING is defined as inputs are V
REF
= V
DDQ
/ 2
SWITCHING is defined as described in the following 2 tables.
[ Table 31 ] Definition of SWITCHING for Address and Command Input Signals
[ Table 32 ] Definition of SWITCHING for Data (DQ)
Table number
Measurement Conditions
Table 34
IDD0 and IDD1
Table 35
IDD2N, IDD2Q, IDD2P(0), IDD2P(1)
Table 36
IDD3N and IDD3P
Table 37
IDD4R, IDD4W, IDD7
Table 38
IDD7 for different speed grades and different tRRD, tFAW conditions
Table 39
IDD5B
Table 40
IDD6, IDD6ET
SWITCHING for Address (row, column) and Command Signals (CS, RAS, CAS, WE) is defined as:
Address
(Row, Column):
If not otherwise mentioned the inputs are stable at HIGH or LOW during 4 clocks
and change then to the opposite value
(e.g. Ax Ax Ax Ax Ax Ax Ax Ax Ax Ax Ax Ax .....
please see each IDDx definition for details
Bank address:
If not otherwise mentioned the bank addresses should be switched like the row/
column addresses - please see each IDDx definition for details
Command
(CS, RAS, CAS, WE):
Define D = {CS, RAS, CAS, WE } := {HIGH, LOW, LOW, LOW}
Define D = {CS, RAS, CAS, WE } := {HIGH, HIGH,HIGH,HIGH}
Define Command Background Pattern = D D D D D D D D D D D D ...
If other commands are necessary (e.g. ACT for IDD0 or Read for IDD4R) the
Background Pattern Command is substituted by the respective CS, RAS, CAS, WE
levels of the necessary command.
See each IDDx definition for details and figures 1,2,3 as examples.
SWITCHING for Data (DQ) is defined as
Data
(DQ)
Data DQ is changing between HIGH and LOW every other data transfer (once per clock) for DQ signals, which means
that data DQ is stable during one clock; see each IDDx definition for exceptions from this rule and for further details.
See figures 1,2,3 as examples.
Data Masking
(DM)
NO Switching; DM must be driven LOW all the time
10.0 Idd Specification Parameters and Test Conditions
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4B1G1646C-ZCG9 | 1Gb C-die DDR3 SDRAM Specification |
| K4C560838C-TCD3 | 256Mb Network-DRAM |
| K4C560838C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 200V; Case Size: 16x31.5 mm; Packaging: Bulk |
| K4C560838C-TCDA | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk |
| K4C561638C-TCD3 | 256Mb Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4B1G1646C-ZCG9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb C-die DDR3 SDRAM Specification |
| K4B1G1646D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G1646D-HCF7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G1646D-HCF8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G1646D-HCH9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。