參數(shù)資料
型號(hào)： K4B1G1646C-ZCG9
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb C-die DDR3 SDRAM Specification
中文描述： 1Gb的?芯片的DDR3 SDRAM規(guī)范
文件頁(yè)數(shù)： 44/63頁(yè)
文件大?。?/td> 1255K
代理商： K4B1G1646C-ZCG9
Page 44 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
12.1 Clock specification
[ Table 45 ] Clock specification
Add note fot tCK(avg)
tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window, where each clock period is calculated from rising edge to
rising edge.
∑
Add note fot tCK(abs)
tCK(abs) is the absolute clock period, as measured from one rising edge to the next consecutive rising edge.
Parameter
Symbol
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Units
min
max
min
max
min
max
min
max
Average clock
period
tCK(avg)
2500
3333
1875
3333
1500
3333
1250
3333
ps
Clock period
tCK(abs)
tCK(avg)min
+
tJIT(per)min
tCK(avg)max
+
tJIT(per)max
tCK(avg)min
+
tJIT(per)min
tCK(avg)max
+
tJIT(per)max
tCK(avg)min
+
tJIT(per)min
tCK(avg)max
+
tJIT(per)max
tCK(avg)min
+
tJIT(per)min
tCK(avg)max
+
tJIT(per)max
ps
N
j=1
tCKj
N
N=200
12.0 Electrical Characteristics and AC timing for DDR3-800 to DDR3-1600
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