參數(shù)資料
型號: K4C560838C-TCD3
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mb Network-DRAM
中文描述: 256Mb的網(wǎng)絡(luò)內(nèi)存
文件頁數(shù): 18/42頁
文件大?。?/td> 880K
代理商: K4C560838C-TCD3
K4C5608/1638C 256Mb Network-DRAM
- 18 -
REV. 0.7 Aug. 2003
D0
D1
D2
D3
Postamble
Preamble
t
DSSK
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
D0
D1
D2
D3
Postamble
Preamble
t
DS
t
DH
t
DS
t
DH
t
DH
t
DS
t
DH
D0
D1
D2
D3
WRA
CK
CK
Input
(Control &
Addresses)
LDQS
DQ0 ~ 7
Postamble
Preamble
Write Timing (x16 device) (Burst Length = 4)
CAS latency = 3
LAL
t
DSSK
t
DSSK
t
DSSK
t
DSSK
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
D0
D1
D2
D3
Postamble
Preamble
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
UDQS
DQ8 ~ 15
LDQS
DQ0 ~ 7
CAS latency = 4
UDQS
DQ8 ~ 15
t
DSSK
t
DSSK
t
DSSK
t
DS
相關(guān)PDF資料
PDF描述
K4C560838C-TCD4 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 200V; Case Size: 16x31.5 mm; Packaging: Bulk
K4C560838C-TCDA Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk
K4C561638C-TCD3 256Mb Network-DRAM
K4C561638C-TCD4 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk
K4C561638C-TCD4000 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4C560838C-TCD4 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM
K4C560838C-TCDA 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM
K4C561638C-TCD3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM
K4C561638C-TCD4 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM
K4C561638C-TCD4000 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM