參數(shù)資料
型號: K4C560838C-TCD4
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 200V; Case Size: 16x31.5 mm; Packaging: Bulk
中文描述: 256Mb的網(wǎng)絡(luò)內(nèi)存
文件頁數(shù): 5/42頁
文件大?。?/td> 880K
代理商: K4C560838C-TCD4
K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 5 -
Pin Names
Pin
Name
A0 to A14
Address Input
BA0, BA1
Bank Address
DQ0 to DQ7 (x8)
Data Input/Output
DQ0 to DQ15 (x16)
CS
Chip Select
FN
Function Control
PD
Power Down Control
CK, (CK)
Clock Input
DQS (X8)
Write/Read Data Strobe
UDQS/LDQS (X16)
Vdd
Power(+2.5V)
Vss
Ground
VddQ
Power (+2.5V)
(for I/O buffer)
VssQ
Ground
(for I/O buffer)
V
REF
Reference Voltage
NC1,NC2
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
400mil Width
875mil Length
66Pin TSOP II
0.65mm
Lead Pitch
Vdd Vdd
DQ0 DQ0
VddQ VddQ
DQ1 NC
2
DQ2 DQ1
VssQ VssQ
DQ3 NC
2
DQ4 DQ2
VddQ VddQ
DQ5 NC
2
DQ6 DQ3
VssQ VssQ
DQ7 NC
2
NC
1
NC
1
VddQ VddQ
LDQS NC
2
NC
1
NC
1
Vdd Vdd
NC
1
NC
1
NC
2
NC
2
A14 A14
A13 A13
FN FN
CS CS
NC
1
NC
1
BA0 BA0
BA1 BA1
A10 A10
A0 A0
A1 A1
A2 A2
A3 A3
Vdd Vdd
Vss Vss
DQ7 DQ15
VssQ VssQ
NC
2
DQ14
DQ6 DQ13
VddQ VddQ
NC
2
DQ12
DQ5 DQ11
VssQ VssQ
NC
2
DQ10
DQ4 DQ9
VddQ VddQ
NC
2
DQ8
NC
1
NC
1
VssQ VssQ
DQS UDQS
NC
1
NC
1
VREF VREF
Vss Vss
NC
2
NC
2
CK CK
CK CK
PD PD
NC
1
NC
1
A12 A12
A11 A11
A9 A9
A8 A8
A7 A7
A6 A6
A5 A5
A4 A4
Vss Vss
K4C561638C-TC
K4C560838C-TC
Pin Assignment
(Top View)
相關(guān)PDF資料
PDF描述
K4C560838C-TCDA Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk
K4C561638C-TCD3 256Mb Network-DRAM
K4C561638C-TCD4 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk
K4C561638C-TCD4000 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk
K4C561638C-TCDA 256Mb Network-DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4C560838C-TCDA 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM
K4C561638C-TCD3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM
K4C561638C-TCD4 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM
K4C561638C-TCD4000 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM
K4C561638C-TCDA 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM