參數(shù)資料
型號: K4C560838C-TCDA
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk
中文描述: 256Mb的網(wǎng)絡(luò)內(nèi)存
文件頁數(shù): 31/42頁
文件大?。?/td> 880K
代理商: K4C560838C-TCDA
K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 31 -
0
2
3
4
5
6
7
8
9
10
11
1
CK
CK
Single Bank Write with VW (CL=3, BL=4, Sequential mode)
DESL
WRA
LAL
WRA
LAL
LAL
Command
Address
DQS
(Input)
DESL
WRA
UA
LA=#3
VW=2
UA
LA
UA
I
RC
= 5 cycles
I
RC
= 5 cycles
LA=#1
VW=1
D0 D1
D0
DESL
WRA
LAL
WRA
LAL
LAL
Command
DESL
WRA
UA
LVW=1
UA
LA
UA
D0 D1
D0
D0
D0
x8 device
Last two data are masked
.
Last three data are masked
.
Address #3 #0 (#1) (#2)
#1 (#2) (#3) (#0)
DQ
(Input)
x16 device
Address
UDQS
(Input)
DQ8 to
DQ15
(Input)
LDQS
(Input)
DQ0 to
DQ7
(Input)
LVW=1
Last two data are masked
.
Last three data are masked
.
Address #3 #0 (#1) (#2)
#1 (#2) (#3) (#0)
Address #3 (#0) (#1) (#2)
#1 (#2) (#3) (#0)
Last three data are masked
.
Last three data are masked
.
Notes :
DQS input must be continued till end of burst count even if some of laster data is masked.
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