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參數(shù)資料
| 型號： | K4C560838C-TCDA |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 34/42頁 |
| 文件大?。?/td> | 880K |
| 代理商： | K4C560838C-TCDA |
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K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 34 -
Q0 Q1
RDA
LAL
DESL
WRA
REF
DESL
REF
0
2
3
4
5
6
7
8
9
10
11
1
I
RC
= 5 cycles
I
REFC
= 15 cycles
I
RCD
= 1 cycle
I
RAS
= 4 cycles
I
RCD
= 1 cycle
Hi-Z
Hi-Z
CL = 3
Hi-Z
Hi-Z
CK
CK
Command
Auto-Refresh Timing (CL=3, BL=4)
DQS
(Output)
DQ
(Output)
or
WRA
Q2 Q3
~
~
~
~
~
~
WRA REF
WRA REF
WRA REF
t
1
t
2
t
3
CK
~
WRA REF
WRA REF
t
8
~
t
7
8 Refresh Cycle
t
REFI
=
Total time of 8 Refresh cycle
8
t
1
+ t
2
+ t
3
+ t
4
+ t
5
+ t
6
+ t
7
+ t
8
8
=
t
REFI
is specified to avoid partly concentrated current of Refresh operation that is activated larger area than
Read/Write operation.
Note :
In case of CL=3, I
REFC
must be meet 15 clock cycles. When the Auto-Refresh operation is performed,
the synthetic average interval of Auto-Refresh command specified by t
REFI
must be satisfied. t
REFI
is
average Interval time in 8 Refresh cycles that is sampled randomly.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C561638C-TCD3 | 256Mb Network-DRAM |
| K4C561638C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| K4C561638C-TCD4000 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| K4C561638C-TCDA | 256Mb Network-DRAM |
| K4C89323AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C561638C-TCD3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCD4 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCD4000 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCDA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C89083AF-ACF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
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