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參數(shù)資料
| 型號(hào)： | K4C561638C-TCD3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb Network-DRAM |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁(yè)數(shù)： | 10/42頁(yè) |
| 文件大?。?/td> | 880K |
| 代理商： | K4C561638C-TCD3 |
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K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 10 -
DC Characteristics and Operating Conditions
(Vdd, VddQ = 2.5V ± 0.15V, Ta = 0~70×
°
C
)
Notes : 1. These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values of t
CK
, t
RC
and I
RC
.
2. These parameters depend on the output loading. The specified values are obtained with the output open.
3. Refer to output driver characteristics for the detail. Output Driver Strength is selected by Extended Mode Register.
Item
Symbol
Max
Units
Notes
D4(400Mbps) DA(366Mbps) D3(333Mbps)
Operating Current
t
CK
= min, I
RC
=min
Read/Write command cycling
OV<=V
IN
<=V
IL(AC)
(max.) V
IH(AC)
(min.) <=V
IN
<=VddQ
1 bank operation, Burst Length = 4
Address change up to 2 times during minimum I
RC
.
I
DD1S
310
300
290
mA
1, 2
Standby Current
t
CK
=min, CS = V
IH
, PD = V
IH
,
0V<=V
IN
<=V
IL(AC)
(max.) V
IH(AC)
(min.)<=V
IH
<=VddQ
All Banks : inactive state
Other input signals are changed one time during 4*t
CK
I
DD2N
85
85
80
1
Standby (Power Down) Current
t
CK
=min, CS = V
IH
, PD = V
IL
(Power Down)
0V<=V
IN
<=VddQ
All Banks : inactive state
I
DD2P
2
2
2
1
Auto-Refresh Current
t
CK
= min, I
REFC
= min, t
REFI
= min
Auto-Refresh command cycling
0V<=V
IN
<=V
IL
(AC) (max.), V
IH
(AC) (min.) <=V
IN
<=VddQ
Address change up to 2 times during minimum I
REFC
.
I
DD5
105
100
95
1
Self-Refresh Current
self-Refresh mode
PD = 0.2V, OV<=V
IN
<=VddQ
I
DD6
3
3
3
Item
Symbol
Min
Max
Unit
Notes
Input Leakage Current
(0V<=V
IN
<=VddQ, All other pins not under test = 0V)
I
LI
-5
5
uA
Output Leakage Current
(Output disabled, 0V<=V
OUT
<=VddQ)
I
LO
-5
5
uA
V
REF
Current
I
REF
-5
5
uA
Normal Output Driver
Output Source DC Current
V
OH
= VddQ - 0.4V
I
OH
(DC)
-10
-
mA
3
Output Sink DC Current
V
OL
=0.4V
I
OL
(DC)
10
-
3
Strong Output Driver
Output Source DC Current
V
OH
= VddQ - 0.4V
I
OH
(DC)
-11
-
3
Output Sink DC Current
V
OL
=0.4V
I
OL
(DC)
11
-
3
Weaker Output Driver
Output Source DC Current
V
OH
= VddQ - 0.4V
I
OH
(DC)
-8
-
3
Output Sink DC Current
V
OL
=0.4V
I
OL
(DC)
8
-
3
Weakest Output Driver
Output Source DC Current
V
OH
= VddQ - 0.4V
I
OH
(DC)
-7
-
3
Output Sink DC Current
V
OL
=0.4V
I
OL
(DC)
7
-
3
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