- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374254 > K4C561638C-TCD3 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Mb Network-DRAM PDF資料下載
參數(shù)資料
| 型號： | K4C561638C-TCD3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb Network-DRAM |
| 中文描述： | 256Mb的網(wǎng)絡內(nèi)存 |
| 文件頁數(shù)： | 12/42頁 |
| 文件大?。?/td> | 880K |
| 代理商： | K4C561638C-TCD3 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 12 -
AC Characteristics and Operating Conditions
(Notes : 1, 2) (Continued)
Symbol
Item
D4(400Mbps)
Min
DA(366Mbps)
Min
D3(333Mbps)
Min
Units Notes
Max
Max
Max
t
REFI
Auto-Refresh Average Interval
0.4
7.8
0.4
7.8
0.4
7.8
us
5
t
PAUSE
Pause Time after Power-up
200
-
200
-
200
-
I
RC
Random Read/Write Cycle Time
(Applicable to Same Bank)
CL = 3
5
-
5
-
5
-
Cycle
CL = 4
5
-
5
-
5
-
I
RCD
RDA/WRA to LAL Command Input Delay
(Applicable to Same Bank)
1
1
1
1
1
1
I
RAS
LAL to RDA/WRA Command Input Delay
(Applicable to Same Bank)
CL = 3
4
-
4
-
4
-
CL = 4
4
-
4
-
4
-
I
RBD
Random Bank Access Delay
(Applicable to Other Bank)
2
-
2
-
2
-
I
RWD
LAL following RDA to WRA Delay
(Applicable to Other Bank)
BL = 2
2
-
2
-
2
-
BL = 4
3
-
3
-
3
-
I
WRD
LAL following WRA to RDA Delay
(Applicable to Other Bank)
1
-
1
-
1
-
I
RSC
Mode Register Set Cycle Time
CL = 3
5
-
5
-
5
-
CL = 4
5
-
5
-
5
-
I
PD
PD Low to Inactive State of Input Buffer
-
1
-
1
-
1
I
PDA
PD High to Active State of Input Buffer
-
1
-
1
-
1
I
PDV
Power down mode valid from REF command
CL = 3
15
-
15
-
15
-
CL = 4
18
-
18
-
18
-
I
REFC
Auto-Refresh Cycle Time
CL = 3
15
-
15
-
15
-
CL = 4
18
-
18
-
18
-
I
CKD
REF Command to Clock Input Disable
at Self-Refresh Entry
16
-
16
-
16
-
I
LOCK
DLL Lock-on Time (Applicable to RDA command)
200
-
200
-
200
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C561638C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| K4C561638C-TCD4000 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| K4C561638C-TCDA | 256Mb Network-DRAM |
| K4C89323AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C561638C-TCD4 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCD4000 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCDA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C89083AF-ACF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-ACF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復。