- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374254 > K4C561638C-TCD4 (SAMSUNG SEMICONDUCTOR CO. LTD.) Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號： | K4C561638C-TCD4 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 30/42頁 |
| 文件大小： | 880K |
| 代理商： | K4C561638C-TCD4 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁當(dāng)前第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
K4C5608/1638C 256Mb Network-DRAM
- 30 -
REV. 0.7 Aug. 2003
0
2
3
4
5
6
7
8
9
10
11
1
CK
CK
Multiple Bank Read-Write Timing (BL = 2)
t
DQSS
WRAa
LALc
I
RBD
= 2 cycles
LALa
RDAb
LALb
DESL
WRAc
LALc
RDAd
LALd
DESL
WRAc
Bank"b"
X
Bank"a"
X
Bank"c"
X
Bank"d"
Bank"c"
X
Command
Bank Add.
(BA0, BA1)
CL = 3
DQS
DQ
DQS
CL = 4
DQ
Dc0 Dc1
Da0 Da1
Hi-Z
Hi-Z
WL = 2
Qb0 Qb1
Qd0
X
I
RCD
= 1 cycle
I
RWD
= 2 cycles
I
RBD
= 2 cycles
I
RWD
= 2 cycles
I
RC
= 5 cycles
I
RCD
= 1 cycle
I
WRD
= 1 cycle
I
RCD
= 1 cycle
I
WRD
= 1 cycle
I
RCD
= 1 cycle
t
DQSS
Hi-Z
Hi-Z
CL = 3
WL = 2
CL = 3
t
DQSS
Dc0 Dc1
Da0 Da1
WL =3
Qb0 Qb1
t
DQSS
Hi-Z
Hi-Z
CL = 4
WL = 3
CL = 4
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Multiple Bank Read-Write Timing (BL = 4)
WL = 2
0
2
3
4
5
6
7
8
9
10
11
1
CK
CK
WRAa
I
RBD
= 2 cycles
LALa
RDAb
LALb
WRAc
LALc
RDAd
LALd
Bank"b"
X
Bank"a"
X
Bank"c"
X
Command
Bank Add.
(BA0, BA1)
CL = 3
DQS
DQ
Da0 Da1
Hi-Z
Hi-Z
Qb0 Qb1
I
RCD
= 1 cycle
I
RWD
= 3 cycles
I
RBD
= 2 cycles
I
RCD
= 1 cycle
I
WRD
= 1 cycle
I
RCD
= 1 cycle I
WRD
= 1 cycle
I
RCD
= 1 cycle
t
DQSS
t
DQSS
DESL
X
Bank"d"
DESL
Da2 Da3
Qb2 Qb3
Dc0 Dc1 Dc2 Dc3
t
DQSS
t
DQSS
CL = 3
Hi-Z
WL = 2
CL = 3
Hi-Z
WL = 3
DQS
CL = 4
DQ
Da0 Da1
Hi-Z
Hi-Z
Qb0 Qb1
Da2 Da3
Qb2 Qb3
Dc0 Dc1 Dc2
CL = 4
WL = 3
Dc3
Note :
"X" is dont care
I
RC
to the same bank must be satisfied.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C561638C-TCD4000 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| K4C561638C-TCDA | 256Mb Network-DRAM |
| K4C89323AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C561638C-TCD4000 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCDA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C89083AF-ACF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-ACF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-ACFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。