- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374254 > K4C561638C-TCD4 (SAMSUNG SEMICONDUCTOR CO. LTD.) Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號： | K4C561638C-TCD4 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 4/42頁 |
| 文件大?。?/td> | 880K |
| 代理商： | K4C561638C-TCD4 |
第1頁第2頁第3頁當(dāng)前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 4 -
Fully Synchronous Operation
Double Data Rate (DDR)
Data input/output are synchronized with both edges of DQS.
Differential Clock (CK and CK)inputs
CS, FN and all address input signals are sampled on the positive edge of CK.
Output data (DQs and DQS) is referenced to the crossings of CK and CK.
Fast clock cycle time of 5ns minimum Clock : 200MHz maximum
Data : 400Mbps/pin maximum
Quad independent banks operation
Fast cycle and short Iatency
Bidirectional data strobe signal
Distributed Auto-Refresh cycle in 7.8us
Self-Refresh
Power Down Mode
Variable Write Length Control
Write Latency = CAS Latency - 1
Programmable CAS Latency and Burst Length
CAS Latency = 3, 4
Burst Length = 2, 4
Organization K4C561638C-TC : 4,194,304 words x4 banks x 16
K4C560838C-TC : 8,388,608 words x4 banks x 8
Power supply voltage Vdd : 2.5 ± 0.15V
VddQ : 2.5 ± 0.15V
2.5V CMOS I/O comply with SSTL-2 (Strong / Normal / Weaker / Weakest)
Package 400X875mil, 66pin TSOP II, 0.65mm pin pitch (TSOP II 66-P-400-0.65)
Item
K4C560838/1638C-TC
DA (366Mbps)
6ns
5.5ns
27.5ns
D4 (400Mbps)
5.5ns
5ns
25ns
D3 (333Mbps)
6.5ns
6ns
30ns
t
CK
Clock Cycle Time (Min.)
CL=3
CL=4
t
RC
Random Read/Write Cycle Time (Min.)
t
RAC
Random Access Time (Max.)
I
DD1S
Operating Current (Single bank) (Max.)
I
DD2P
Power Down Current (Max.)
I
DD6
Self-Refresh Current(Max.)
22ns
24ns
26ns
310mA
300mA
290mA
2mA
2mA
2mA
3mA
3mA
3mA
Key Feature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C561638C-TCD4000 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| K4C561638C-TCDA | 256Mb Network-DRAM |
| K4C89323AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C561638C-TCD4000 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCDA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C89083AF-ACF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-ACF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-ACFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。