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參數(shù)資料
| 型號(hào)： | K4C561638C-TCDA |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb Network-DRAM |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁(yè)數(shù)： | 28/42頁(yè) |
| 文件大?。?/td> | 880K |
| 代理商： | K4C561638C-TCDA |
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K4C5608/1638C 256Mb Network-DRAM
- 28 -
REV. 0.7 Aug. 2003
RDAa
RDAb
0
2
3
4
5
6
7
8
9
10
11
1
I
RC
= 5 cycles
I
RBD
= 2 cycles
CK
CK
Command
Multiple Bank Read Timing (CL = 3)
I
RAS
= 4 cycles
LALa
RDAb
LALb
DESL
RDAa
LALa
RDAc
LALc
RDAd
LALd
Bank"b"
X
Bank"a"
X
Bank"a"
X
Bank"c"
X
Bank"d"
X
Bank"b"
Hi-Z
Hi-Z
Qa0 Qa1
Hi-Z
CL = 3
CL = 3
Hi-Z
Hi-Z
Hi-Z
Qb0 Qb1
Qa0 Qa1
Qc0
Hi-Z
Qa0 Qa1
Hi-Z
CL = 3
CL = 3
Hi-Z
Qb0 Qb1
Qc0
Qa2 Qa3
Qb3
Qb2
Qa0 Qa1 Qa2 Qa3
CL = 3
CL = 3
I
RBD
= 2 cycles
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RBD
= 2 cycles
I
RBD
= 2 cycles
Bank Add.
(BA0, BA1)
BL = 2
DQS
(Output)
DQ
DQS
(Output)
BL = 4
DQ
(Output)
(Output)
RDAa
RDAb
0
2
3
4
5
6
7
8
9
10
11
1
I
RC
= 5 cycles
I
RBD
= 2 cycles
CK
CK
Command
Multiple Bank Read Timing (CL = 4)
I
RAS
= 4 cycles
LALa
RDAb
LALb
DESL
RDAa
LALa
RDAc
LALc
RDAd
LALd
Bank"b"
X
Bank"a"
X
Bank"a"
X
Bank"c"
X
Bank"d"
X
Bank"b"
Hi-Z
Hi-Z
Qa0 Qa1
Hi-Z
CL = 4
CL = 4
Hi-Z
Hi-Z
Hi-Z
Qb0 Qb1
Qa0 Qa1
Hi-Z
Qa0 Qa1
Hi-Z
CL = 4
CL = 4
Hi-Z
Qb0 Qb1
Qa2
Qa2 Qa3
Qb3
Qb2
Qa0 Qa1
CL = 4
CL = 4
I
RBD
= 2 cycles
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RCD
=1 cycle
I
RBD
= 2 cycles
I
RBD
= 2 cycles
Bank Add.
(BA0, BA1)
BL = 2
DQS
(Output)
DQ
DQS
(Output)
BL = 4
DQ
(Output)
(Output)
Note :
"X" is don’t care. I
RC
to the same bank must be satisfied.
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