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參數(shù)資料
| 型號(hào)： | K4C561638C-TCDA |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb Network-DRAM |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁(yè)數(shù)： | 8/42頁(yè) |
| 文件大?。?/td> | 880K |
| 代理商： | K4C561638C-TCDA |
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K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 8 -
Absolute Maximum Ratings
Caution : Conditions outside the limits listed under "ABSOLUTE MAXIMUM RATINGS" may cause permanent damage to the device.
The device is not meant to be operated under conditions outside the limits described in the operational section of this specifi-
cation. Exposure to "ABSOLUTE MAXIMUM RATINGS" conditions for extended periods may affect device reliability.
Recommanded DC,AC Operating Conditions (Notes : 1)
(Ta = 0 to 70 ×
°
C)
Symbol
Parameter
Rating
Units
Notes
Vdd
Power Supply Voltage
-0.3 to 3.3
V
VddQ
Power Supply Voltage (for I/O buffer)
-0.3 to Vdd + 0.3
V
V
IN
Input Voltage
-0.3 to Vdd + 0.3
V
V
OUT
DQ pin Voltage
-0.3 to VddQ + 0.3
V
V
REF
Input Reference Voltage
-0.3 to Vdd + 0.3
V
T
OPR
Operating Temperature
0 to 70
O
C
T
STG
Storage Temperature
-55 to 150
O
C
T
SOLDER
Soldering Temperature(10s)
260
O
C
P
D
Power Dissipation
1
W
I
OUT
Short Circuit Output Current
± 50
mA
Symbol
Parameter
Min
Typ
Max
Units
Notes
Vdd
Power Supply Voltage
2.35
2.5
2.65
V
VddQ
Power Supply Voltage (for I/O Buffer)
2.35
2.5
2.65
V
V
REF
Input Reference Voltage
VddQ/2*96%
VddQ/2
VddQ/2*104%
V
2
V
IH
(DC)
Input DC high Voltage
V
REF
+0.2
-
VddQ+0.2
V
5
V
IL
(DC)
Input DC Low Voltage
-0.1
-
V
REF
-0.2
V
5
V
ICK
(DC)
Differential Clock DC Input Voltage
-0.1
-
VddQ+0.1
V
10
V
ID
(DC)
Input Differential Voltage. CK and CK Inputs (DC)
0.4
-
VddQ+0.2
V
7,10
V
IH
(AC)
Input AC High Voltage
V
REF
+0.35
-
VddQ+0.2
V
3,6
V
IL
(AC)
Input AC Low Voltage
-0.1
-
V
REF
-0.35
V
4,6
V
ID
(AC)
Input Differential Voltage. CK and CK Inputs (AC)
0.7
-
VddQ+0.2
V
7,10
V
X
(AC)
Differential AC Input Cross Point Voltage
VddQ/2-0.2
-
VddQ/2+0.2
V
8,10
V
ISO
(AC)
Differential Clock AC Middle Level
VddQ/2-0.2
-
VddQ/2+0.2
V
9,10
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