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參數(shù)資料
| 型號(hào)： | K4C89323AF-GCF5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| 中文描述： | 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存 |
| 文件頁(yè)數(shù)： | 41/58頁(yè) |
| 文件大小： | 1340K |
| 代理商： | K4C89323AF-GCF5 |
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K4C89363AF
- 41 -
REV. 0.0 Sep. 2002
Power Down Timing (CL=4, BL=4)
R e a d c y c l e t o P o w e r D o w n M o d e
Command
RDA
LAL
or
WRA
BL=2, SEQUENTIAL MODE
Address
UA
UA
DESL
LA
Unidirectional DS/Free Running QS mode
Unidirectional DS/QS mode
PD
t
IH
t
Q P D H
t
PDEX
t
IS
I
P D
=2 cycle
I
RC(min),
t
R E F I ( m a x )
Q0
Q1
Low
Hi-Z
CL=4
Q2
Q3
Q0
Q1
Hi-Z
CL=4
Q2
Q3
Hi-Z
Hi-Z
PD must be kept "High" level until end of Burst data output.
PD should be brought to "High" within t
REFI
(max.) to maintain the data written into cell.
In Power Down Mode, PD "Low" and a stable clock signal must be maintained.
When PD is brought to "High", a valid executable command may be applied I
P D A
cycles later.
Note :
Power Down Entry
Power Down Exit
～
0
2
3
4
5
6
7
8
9
10
n-1
1
n
n+1
n+2
n+3
～
～
～
～
～
～
～
～
～
CLK
CLK
DESL
I
P D A
(Output)
LQS/UQS
(Output)
DQ
(Input)
LDS/UDS
(Output)
LQS/UQS
(Output)
DQ
(Input)
LDS/UDS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C89323AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89323AF-GCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
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