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參數(shù)資料
| 型號： | K4C89323AF-GCF6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| 中文描述： | 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡內(nèi)存 |
| 文件頁數(shù)： | 8/58頁 |
| 文件大小： | 1340K |
| 代理商： | K4C89323AF-GCF6 |
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K4C89363AF
REV. 0.0 Nov. 2002
- 8 -
DC Characteristics and Operating Conditions
(Vdd = 2.5V ± 0.125V, VddQ = 1.8V ± 0.1V, Ta = 0~70
°
C )
Notes : 1. These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values of tCK, tRC and IRC.
2. These parameters depend on the output loading. The specified values are obtained with the output open.
3. Refer to output driver characteristics for the detail. Output Driver Strength is selected by Extended Mode Regis ter.
P a r a m e t e r
S y m b o l
M a x
Units
Notes
F6
FB
F 5
Operating Current
tCK = min, IRC=min
Read/Write command cycling
O V < = VIN< = VIL(AC) (max.) VIH(AC)(min.) <=VIN<=VDDQ
1 bank operation, Burst Length = 4
Address change up to 2 times during minimum IRC.
IDD1S
T B D
T B D
TBD
m A
1, 2
Standby Current
tCK=min, C S = VIH, PD = VIH,
0 V < = VIN<=VIL(AC)(max.) VIH(AC)(min.)<=VIH< = VDDQ
All Banks : inactive state
Other input signals are changed one time during 4*tCK
IDD2N
T B D
T B D
TBD
1
Standby (Power Down) Current
tCK=min, C S = VIH, PD = VIL ( P o w e r D o w n )
0 V < = VIN<=VDDQ
All Banks : inactive state
IDD2P
T B D
T B D
TBD
1
Auto-Refresh Current
tCK = min, IREFC= min, tREFI = min
Auto-Refresh command cycling
0 V < = VIN<=VIL(AC) (max.), VIH(AC) (min.) <=VIN<=VDDQ
Address change up to 2 times during minimum IREFC.
IDD5
T B D
T B D
TBD
1
Self-Refresh Current
self-Refresh mode
P D = 0 . 2 V , O V < = VIN< = VDDQ
IDD6
T B D
T B D
TBD
P a r a m e t e r
S y m b o l
Min
M a x
Unit
Notes
Input Leakage Current
(0V<=VIN<=VddQ, All other pins not under test = 0V)
ILI
-5
5
uA
Output Leakage Current
(Output disabled, 0V<=VOUT< = V d d Q )
ILO
-5
5
uA
VREF Current
IREF
-5
5
uA
Normal Output Driver
Output Source DC Current
V d d Q = 1 . 7 V / VOH = 1 . 4 2 0 V
IOH( D C )
-5.6
-
m A
3
O u t p u t S i n k D C C u r r e n t
V d d Q = 1 . 7 V / VOL = 0.280V
IOL( D C )
5.6
-
3
Strong Output Driver
Output Source DC Current
V d d Q = 1 . 7 V / VOH = 1 . 4 2 0 V
IOH( D C )
-9.8
-
3
O u t p u t S i n k D C C u r r e n t
V d d Q = 1 . 7 V / VOL = 0.280V
IOL( D C )
9.8
-
3
Weak Output Driver
Output Source DC Current
V d d Q = 1 . 7 V / VOH = 1 . 4 2 0 V
IOH( D C )
-2.8
-
3
O u t p u t S i n k D C C u r r e n t
V d d Q = 1 . 7 V / VOL = 0.280V
IOL( D C )
2.8
-
3
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89323AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
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