參數(shù)資料
型號: K4C89323AF-GCFB
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
中文描述: 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡內(nèi)存
文件頁數(shù): 40/58頁
文件大?。?/td> 1340K
代理商: K4C89323AF-GCFB
K4C89363AF
- 40 -
REV. 0.0 Sep. 2002
Write with Variable Write Length (VW) Control(CL=4)
Command
WRA
LAL
DESL
WRA
LAL
BL=2, SEQUENTIAL MODE
DESL
Address
UA
L A = # 3
V W = A l l
UA
L A = # 1
V W = 1
Bank Add.
Bank
"a"
Bank
"a"
(Input)
LQS/UQS
(Input)
LDS/UDS
D0
D1
D0
Lower Address #3 #2
#1 (#0)
Last one data is masked.
Command
WRA
LAL
DESL
WRA
LAL
BL=4, SEQUENTIAL MODE
DESL
Address
UA
L A = # 3
V W = A l l
UA
L A = # 1
V W = 1
Bank Add.
Bank
"a"
(Input)
LQS/UQS
(Input)
LDS/UDS
D0
D1
D0
Lower Address #3 #0 #1 #2
#1 (#2) (#3) (#0)
Last three data are masked.
Bank
"a"
DESL
WRA
LAL
UA
L A = # 2
V W = 2
Bank
"a"
D2
D3
D0
D1
#2 #3 (#0) (#1)
Last two data are masked.
Note : DS input must be continued till end of burst count even if some of laster data is masked.
0
2
3
4
5
6
7
8
9
10
11
1
12
13
14
15
CLK
CLK
VW0 = Low
VW1 = don’ t care
VW0 = High
VW1 = don’ t care
VW0 = High
VW1 = Low
VW0 = High
VW1 = High
VW0 = Low
VW1 = High
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K4C89323AF-TCF5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
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K4C89363AF 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
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