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參數(shù)資料
| 型號(hào)： | K4C89323AF-TCF6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| 中文描述： | 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 10/58頁 |
| 文件大?。?/td> | 1340K |
| 代理商： | K4C89323AF-TCF6 |
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K4C89363AF
REV. 0.0 Nov. 2002
- 10 -
AC Characteristics and Operating Conditions
(Notes : 1, 2) (Continued)
S y m b o l
P a r a m e t e r
F 6
F B
F5
Units
Notes
Min
M a x
Min
M a x
Min
M a x
tLZ
Data-out Low Impedance Time from CLK
-0.5
-
-0.5
-
-0.6
-
3, 6, 8
tHZ
Data-out High Impedance Time from CLK
-
0.5
-
0.5
-
0.6
3, 7, 8
tQPDH
Last Output to PD High Hold Time
0
-
0
-
0
-
tPDEX
Power Down Exit Time
0.6
-
0.6
-
0.7
-
3
tT
Input Transition Time
0.1
1
0.1
1
0.1
1
tFPDL
PD Low Input Window for Self-Refresh Entry
-0.5*t
C K
5
-0.5*t
C K
5
-0.5*t
CK
5
3
tREFI
Auto-Refresh Average Interval
0.4
3.9
0.4
3.9
0.4
3.9
us
5
tPAUSE
Pause Time after Power-up
200
-
200
-
200
-
IRC
Random Read/Write Cycle Time
(Applicable to Same Bank)
C
L
= 4
5
-
5
-
5
-
Cycle
C
L
= 5
6
-
6
-
6
-
C
L
= 6
7
-
7
-
7
-
IRCD
RDA/WRA to LAL Command Input Delay
(Applicable to Same Bank)
1
1
1
1
1
1
IRAS
LAL to RDA/WRA Command Input Delay
(Applicable to Same Bank)
C
L
= 4
4
-
4
-
4
-
C
L
= 5
5
-
5
-
5
-
C
L
= 6
6
-
6
-
6
-
IRBD
Random Bank Access Delay
(Applicable to Other Bank)
2
-
2
-
2
-
IRWD
LAL following RDA to WRA Delay
(Applicable to Other Bank)
BL = 2
2
-
2
-
2
-
BL = 4
3
-
3
-
3
-
IWRD
LAL following WRA to RDA Delay
(Applicable to Other Bank)
1
-
1
-
1
-
IRSC
Mode Register Set Cycle Time
C
L
= 4
7
-
7
-
7
-
C
L
= 5
7
-
7
-
7
-
C
L
= 6
7
-
7
-
7
-
IPD
PD Low to Inactive State of Input Buffer
-
2
-
2
-
2
IPDA
PD High to Active State of Input Buffer
1
-
1
-
1
-
IPDV
Power down mode valid from REF command
C
L
= 4
19
-
19
-
19
-
C
L
= 5
23
-
23
-
23
-
C
L
= 6
25
-
25
-
25
-
IREFC
Auto-Refresh Cycle Time
C
L
= 4
19
-
19
-
19
-
C
L
= 5
23
-
23
-
23
-
C
L
= 6
25
-
25
-
25
-
ICKD
REF Command to Clock Input Disable
at Self-Refresh Entry
IREFC
-
IREFC
-
IREFC
-
ILOCK
DLL Lock-on Time (Applicable to RDA command)
200
-
200
-
200
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C89323AF-TCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89323AF-TCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
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