- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374254 > K4C89323AF-TCF6 (SAMSUNG SEMICONDUCTOR CO. LTD.) 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM PDF資料下載
參數(shù)資料
| 型號： | K4C89323AF-TCF6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| 中文描述： | 2097152 - 4字×銀行× 36位的雙數(shù)據(jù)速率網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 19/58頁 |
| 文件大?。?/td> | 1340K |
| 代理商： | K4C89323AF-TCF6 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當(dāng)前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁
K4C89363AF
REV. 0.0 Nov. 2002
- 19 -
Auto-Refresh Command Table
Function
C o m m a n d
(Symbol)
Current
State
PD
C S
FN
B A 1 - B A 0
A14-A9
A 8
A 7
A 6 - A 0
Notes
n - 1
n
Active
WRA(1st)
S t a n d b y
H
H
L
L
X
X
X
X
X
Auto-Refresh
R E F ( 2 n d )
Active
H
H
L
X
X
X
X
X
X
Self-Refresh Command Table
Function
C o m m a n d
(Symbol)
C u r r e n t
State
P D
C S
FN
B A 1 -
B A 0
A 1 4 - A 9
A 8
A 7
A 6 - A 0
Notes
n-1
n
Active
WRA(1st)
Standby
H
H
L
L
X
X
X
X
X
Self-Refresh Entry
REF(2nd)
Active
H
L
L
X
X
X
X
X
X
7, 8
Self-Refresh Continue
-
Self-Refresh
L
L
X
X
X
X
X
X
X
Self-Refresh Exit
S E L F X
Self-Refresh
L
H
H
X
X
X
X
X
X
9
Power Down Table
Notes :
7. PD has to be brought to Low within t
FPDL
f r o m R E F c o m m a n d .
8. P D should be brought to Low after DQ’ s state turned high impedance.
9 . W h e n PD is brought to High from Low, this function is executed asynchronously.
Function
C o m m a n d
(Symbol)
C u r r e n t
State
PD
CS
F N
B A 1 -
B A 0
A 1 4 - A 9
A 8
A 7
A 6 - A 0
Notes
n-1
n
Power Down Entry
P D E N
Standby
H
L
H
X
X
X
X
X
X
8
Power Down Continue
-
P o w e r D o w n
L
L
X
X
X
X
X
X
X
Power Down Exit
P D E X
P o w e r D o w n
L
H
H
X
X
X
X
X
X
9
Mode Register Set Command Truth Table
Note :
6. Refer to "Mode Register Table".
C o m m a n d ( S y m b o l )
C S
F N
B A 1 - B A 0
A 1 4 - A 9
A8
A 7
A 6 - A 0
Notes
RDA (1st)
L
H
X
X
X
X
X
MRS (2nd)
L
X
V
L
L
V
V
6
Function Truth Table (Continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C89323AF-TCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89323AF-TCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89363AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。